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RF3300-3TR7

Description
RF/Microwave Amplifier, 1 Func, GAAS
CategoryWireless rf/communication    Radio frequency and microwave   
File Size76KB,6 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Download Datasheet Parametric Compare View All

RF3300-3TR7 Overview

RF/Microwave Amplifier, 1 Func, GAAS

RF3300-3TR7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQorvo
package instructionLCC12(UNSPEC)
Reach Compliance Codeunknown
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals12
Package body materialCERAMIC
Encapsulate equivalent codeLCC12(UNSPEC)
power supply3.7 V
Maximum slew rate180 mA
surface mountYES
technologyGAAS
Base Number Matches1
RF3300-3
0
Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
Product Description
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the current
drain. The device is self-contained with 50Ω input and
output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
7.375 TYP
6.775
6.575 TYP
5.875 TYP
3V 1900MHz LINEAR AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
• Designed for Compatibility with Qualcomm
Chipsets
1.625
2.425
3.575
4.375
1
5.075 TYP
4.375 TYP
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.125 TYP
0.000
0.125 TYP
0.925 TYP
5.075 TYP
5.875 TYP
0.000
1.750
4.250
Dimensions in mm.
Bottom View
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: Module (6mmx7.5mm)
Features
• Single 3V Supply with Internal V
REF
• Integrated Power Detector
• 25dB Linear Gain
• 40mA Idle Current (Low Power Mode)
VMODE
PA_ON
VCC3 1
12
11
Pwr
Det
10 PDET_OUT
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
GND 2
Bias
9 VCC2
GND 3
8 RF OUT
Ordering Information
RF IN 4
7 GND
RF3300-3
3V 1900MHz Linear Amplifier Module
RF3300-3PCBA-41XFully Assembled Evaluation Board
VCC1 5
6 GND
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A6 050928
2-547

RF3300-3TR7 Related Products

RF3300-3TR7 RF3300-3TR13X RF3300-3SR
Description RF/Microwave Amplifier, 1 Func, GAAS RF/Microwave Amplifier, 1 Func, GAAS RF/Microwave Amplifier, 1 Func, GAAS
Is it Rohs certified? incompatible incompatible incompatible
Maker Qorvo Qorvo Qorvo
package instruction LCC12(UNSPEC) LCC12(UNSPEC) LCC12(UNSPEC)
Reach Compliance Code unknown unknown unknown
Installation features SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
Number of functions 1 1 1
Number of terminals 12 12 12
Package body material CERAMIC CERAMIC CERAMIC
Encapsulate equivalent code LCC12(UNSPEC) LCC12(UNSPEC) LCC12(UNSPEC)
power supply 3.7 V 3.7 V 3.7 V
Maximum slew rate 180 mA 180 mA 180 mA
surface mount YES YES YES
technology GAAS GAAS GAAS
Base Number Matches 1 1 1
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