RF3300-3
0
Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
Product Description
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the current
drain. The device is self-contained with 50Ω input and
output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
7.375 TYP
6.775
6.575 TYP
5.875 TYP
3V 1900MHz LINEAR AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
• Designed for Compatibility with Qualcomm
Chipsets
1.625
2.425
3.575
4.375
1
5.075 TYP
4.375 TYP
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.125 TYP
0.000
0.125 TYP
0.925 TYP
5.075 TYP
5.875 TYP
0.000
1.750
4.250
Dimensions in mm.
Bottom View
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: Module (6mmx7.5mm)
Features
• Single 3V Supply with Internal V
REF
• Integrated Power Detector
• 25dB Linear Gain
• 40mA Idle Current (Low Power Mode)
VMODE
PA_ON
VCC3 1
12
11
Pwr
Det
10 PDET_OUT
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
GND 2
Bias
9 VCC2
GND 3
8 RF OUT
Ordering Information
RF IN 4
7 GND
RF3300-3
3V 1900MHz Linear Amplifier Module
RF3300-3PCBA-41XFully Assembled Evaluation Board
VCC1 5
6 GND
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A6 050928
2-547
RF3300-3
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (P
OUT
≤28dBm)
Control Voltage (PA_ON)
Mode Voltage (V
MODE
)
Input RF Power
Operating Case Temperature
Storage Temperature
Rating
+8.0
+5.2
+3.6
+3.6
+10
-30 to +100
-30 to +150
Unit
V
DC
V
DC
V
DC
V
DC
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
High Power State
(V
MODE
Low)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Total Linear Efficiency
Adjacent Channel Power
Rejection
Input VSWR
Output VSWR
Noise Power
Specification
Min.
Typ.
Max.
Unit
Condition
Typical Performance at V
CC
=3.2V,
PA_ON=High, T
AMB
=25°C,
Frequency=1850MHz to 1910MHz
(unless otherwise specified)
1850
24
1910
25
-45
-45
28
35
-47
-61
1.5:1
MHz
dB
dBc
dBc
dBm
%
dBc
dBc
P
OUT
=28dBm
ACPR@1.25MHz, P
OUT
=28dBm
ACPR@2.25MHz, P
OUT
=28dBm
No damage.
No oscillations. >-70dBc
At 80MHz offset.
Typical Performance at V
CC
=3.2V,
PA_ON=High, T
AMB
=25°C,
Frequency=1850MHz to 1910MHz
(unless otherwise specified)
-46
-58
10:1
6:1
-141
dBm/Hz
Low Power State
(V
MODE
High)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Adjacent Channel Power
Rejection
Input VSWR
Output VSWR
1850
17
1910
20
-45
-45
MHz
dB
dBc
dBc
dBm
dBc
dBc
16
-49
-64
2:1
-47
-59
10:1
6:1
ACPR@1.25MHz, P
OUT
=16dBm
ACPR@2.25MHz, P
OUT
=16dBm
No damage.
No oscillations. >-70dBc
2-548
Rev A6 050928
RF3300-3
Parameter
DC Supply
Supply Voltage
Quiescent Current
PA_ON Current
V
MODE
Current
Turn On/Off Time
3.2
3.7
150
40
0.1
0.1
4.2
180
55
V
mA
mA
µA
µA
µs
Specification
Min.
Typ.
Max.
Unit
T
AMB
=25
o
C
V
MODE
=Low
V
MODE
=High
Condition
<40
Total Current (Power Down)
PA_ON “Low” Voltage Range
PA_ON “High” Voltage Range
V
MODE
“Low” Voltage Range
V
MODE
“High” Voltage Range
Gain Settling Time
5
0
1.7
0
1.7
2.7
2.7
0.5
3.6
0.5
3.6
6
6
µA
V
V
V
V
µs
µs
PA_ON switched from low to high, I
CC
to
within 90% of the final value, P
OUT
within
1dB of the final value.
PA_ON=Low
Must not exceed V
CC
.
Must not exceed V
CC
.
PA_ON switched from low to high,
P
OUT
within 1dB of the final value.
PA_ON switched from high to low,
P
OUT
within 1dB of the final value.
P
OUT
=28dBm, V
MODE
=Low
P
OUT
=16dBm, V
MODE
=High
Internal Power Detector
PDET Output Voltage
1.35
0.6
V
V
Rev A6 050928
2-549
RF3300-3
Pin
1
2
3
4
Function
VCC3
GND
GND
RF IN
Description
Bias circuit and HDET power supply. A low frequency decoupling
capacitor (2.2µF) is required. Type: P
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
RF input internally matched to 50Ω. This input is internally AC-coupled
at the IC; however a shunt inductor used in the input matching network
will provide a DC path to ground for components connected to the RF
IN pin. A DC blocking capacitor may be required at this pin. Type: A, I
Interface Schematic
VCC1
RF IN
From
Bias
Stage
5
6
7
8
9
10
11
VCC1
GND
GND
RF OUT
VCC2
PDET_OUT
VMODE
First stage power supply. A low frequency decoupling capacitor (2.2µF)
is required. Type: P
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
RF output internally matched to 50Ω. This input is internally AC-cou-
pled. Type: A, O
Output stage power supply. A low frequency decoupling capacitor
(2.2µF) is required. Type: P
Power detector output. Type: A, O
Gain step control. When this pin is High, the module is in low power
mode, and the amplifier’s current is reduced. When this pin is Low, the
module is in high power mode. Voltage should not be applied to this pin
before VCC3 is applied. Type: D, I
Device enable control. When this pin is High, the device is on. When
this pin is Low, the device is off. Voltage should not be applied to this
pin before VCC3 is applied. Type: D, I
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul-
tiple vias. The pad should have a short thermal path to the ground
plane. Type: P
I=Input; O=Output; A=Analog; D=Digital; P=Power
12
13
PA_ON
GND_SLUG
Note: Where Type code is:
2-550
Rev A6 050928
RF3300-3
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
PA_ON
VMODE
R2
100 kΩ
R3
100 kΩ
C4
10 nF
VCC3
C3
2.2
µF
1
12
11
Pwr
Det
10
R1
1 kΩ
9
C2
2.2
µF
PDET_OUT
VCC2
2
Bias
3
J1
RF IN
VCC1
C1
2.2
µF
50
Ω µstrip
4
8
50
Ω µstrip
7
J2
RF OUT
5
6
NOTE:
Resistors R2 and R3 are provided on the evaluation board to protect against power sequencing
issues. (Refer to pin descriptions 11 and 12.) These resistors are not needed when the VCC3 is
connected to the handset battery.
Rev A6 050928
2-551
京公网安备 11010802033920号
EEWORLD
