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B2S

Description
0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size136KB,2 Pages
ManufacturerPacelader Industrial
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B2S Overview

0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

B1S thru B10S
MINI SURFACE MOUNT GLASS PASSIVATED RECTIFIERS
VOLTAGE - 100 TO 1000 VOLTS
CURRENT - 0.5 AMPERES
FEATURES
Plastic material used carries Underwiters
Laboratory recognition 94V-0
Low leakage
Surge overload rating-30 amperes peak
Ldeal for printed circuit board
Exceeds environmental standards of MMIL-S-19500
MECHANICAL DATA
Case Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Terminals Lead solderable per MIL-STD-202, Method 208
Polarity Polarity symbols molded or marking on body.
Mounting position Any
Weight 0.008 ounce, 0.22gram
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temp. unless otherwise specified
Single phase, half sine wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
B1S
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward on glass-epoxy P
.C.B (Note 1)
0
Current T
A
=30 C on aluminum substrate (Note 3)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave
Superimposed on Rated Load
I
2
t Rating fusing (t<8.35ms)
Maximum Forward Voltage Drop per Bridge Element at 0.5A
Maximum Reverse Current at Rated T
J
=25 C
0
DC Blocking Voltage per element T
J
=125 C
Typical Junction capacitance per leg (Note 1) C
J
Typical Thermal resistance per leg (Note 2) R
Operating Temperature Range T
J
Storage Temperature Range T
A
JA
0
B2S
200
140
200
B4S
400
280
400
0.5
0.8
30
5
1
5
25
85
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
100
70
100
Amps
A
2
t
V
A
pF
0
C/W
0
-55 to +150
-55 to +150
C
C
0
NOTES
1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts
2. Thermal Resestance From Junction to Ambient and from junction to lead mounted on P
.C.B with 0.05 x 0.05 (13x13mm) copper pads.
3. On alum substrate P
.C.B with an rea of 0.8x0.8x0.25 (20x20x6.4mm) mounte on 0.05x0.05 (13x13mm) solder pad.
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B2S Related Products

B2S B10S B1S B8S B6S B4S
Description 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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Index Files: 1152  1945  2123  2295  908  24  40  43  47  19 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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