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RU4ZWS

Description
Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size28KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

RU4ZWS Overview

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,

RU4ZWS Parametric

Parameter NameAttribute value
MakerSANKEN
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse recovery time0.4 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
( ) is with
Heatsink
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
F
(V)
max
I
F
(A)
I
R
I
R
(H)
(µA)
(µA)
V
R
= V
RM
V
R
= V
RM
max
Ta =100°C max
Others
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
t
rr
Œ
(µs)
I
F
/
I
RP
(mA)
t
rr

(µs)
I
F
/
I
RP
(mA)
Rth (j- )
(°C/ W)
Mass
Fig.
(g)
RU 4Y
RU 4Z
RU 4
RU 4A
RU 4B
RU 4C
100
2.0 (3.5)
200
300
400
40 to +150
70
1.3
3.5
10
10/10
0.4
3.0
0.18
10/20
8.0
1.2
A
1.5
600
800
1.5 (3.0)
50
1.6
500
50
100/100
100/200
1000
1.5 (2.5)
RU 4Y, 4Z
Ta—I
F(AV)
Derating
3.5
I
F(AV)
(A)
20•20•1t Cu
V
F
—I
F
Characteristics
(Typical)
50
I
FSM
(A)
70
60
50
40
30
20
10
I
FMS
Rating
I
FSM
(A)
3.0
5mm
5mm
10
Forward Current I
F
(A)
20ms
1
2.0
0.1
1.0
0.01
T
a
= 150ºC
100ºC
60ºC
25ºC
0
0
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0.001
Peak Forward Surge Current
Average Forward Current
th
Wi
W
ith
ou
ea
tH
He
ats
ink
in
k
ts
0
0.4
0.8
1.2
1.6
Forward Voltage V
F
(V)
2.0
0
1
5
10
Overcurrent Cycles
50
RU 4, 4A, 4B
Ta—I
F(AV)
Derating
3.0
I
F(AV)
(A)
20•20•1t Cu
V
F
—I
F
Characteristics
(Typical)
50
I
FSM
(A)
50
I
FMS
Rating
I
FSM
(A)
2.5
5mm
5mm
10
Forward Current I
F
(A)
40
20ms
Average Forward Current
2.0
1
Peak Forward Surge Current
W
30
th
Wi
1.5
1.0
0.5
0
ith
ou
He
tH
ea
ts
0.1
ink
0.01
T
a
= 150ºC
100ºC
60ºC
25ºC
ats
ink
20
10
0
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0.001
0
0.4
0.8
1.2
1.6
Forward Voltage V
F
(V)
2.0
0
1
5
10
Overcurrent Cycles
50
RU 4C
Ta—I
F(AV)
Derating
2.5
I
F(AV)
(A)
20•20•1t Cu
V
F
—I
F
Characteristics
(Typical)
50
I
FSM
(A)
50
I
FMS
Rating
I
FSM
(A)
5mm
5mm
Forward Current I
F
(A)
2.0
10
40
20ms
1.5
1
Peak Forward Surge Current
Average Forward Current
W
30
th
Wi
ith
ou
ats
He
1.0
tH
ea
t
0.1
sin
k
0.5
0.01
T
a
= 150ºC
100ºC
60ºC
25ºC
20
ink
10
0
0
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0.001
0
0.4
0.8
1.2
1.6
Forward Voltage V
F
(V)
2.0
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
1.4
±0.1
Cathode Mark
50.0
±0.1
8.0
±0.2
6.5
±0.2
36

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