FSS913AOD1 datasheet, PDF - EEWORLD Datasheet

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FSS913AOD1: DescriptionPower Field-Effect Transistor, 10A I(D), 100V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size285KB，8 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FSS913AOD1 Overview

Power Field-Effect Transistor, 10A I(D), 100V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

FSS913AOD1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	56 W
Maximum power dissipation(Abs)	56 W
Maximum pulsed drain current (IDM)	30 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	80 ns
Maximum opening time (tons)	75 ns
Base Number Matches	1

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FSS913AOD1 Related Products

	FSS913AOD1	FSS913AOR4	FSS913AOR3	FSS913AOD3	FSS913AOR1
Description	Power Field-Effect Transistor, 10A I(D), 100V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Power Field-Effect Transistor, 10A I(D), 100V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Power Field-Effect Transistor, 10A I(D), 100V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Power Field-Effect Transistor, 10A I(D), 100V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Power Field-Effect Transistor, 10A I(D), 100V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Harris	Harris	Harris	Harris	Harris
package instruction	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	10 A	10 A	10 A	10 A	10 A
Maximum drain current (ID)	10 A	10 A	10 A	10 A	10 A
Maximum drain-source on-resistance	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω	0.28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	56 W	56 W	56 W	56 W	56 W
Maximum power dissipation(Abs)	56 W	56 W	56 W	56 W	56 W
Maximum pulsed drain current (IDM)	30 A	30 A	30 A	30 A	30 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	80 ns	80 ns	80 ns	80 ns	80 ns
Maximum opening time (tons)	75 ns	75 ns	75 ns	75 ns	75 ns
Base Number Matches	1	1	1	-	-

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