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DB3

Description
DIAC, 36V V(BO) Max,
CategoryAnalog mixed-signal IC    Trigger device   
File Size312KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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DIAC, 36V V(BO) Max,

DB3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Maximum breakover voltage36 V
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
surface mountNO
Trigger device typeDIAC
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
DB3.DB4
VOLTAGE RANGE: 28-45 V
SILICON BIDIRECTIONAL DIACS
The three layer,two termnal,axial lead,hermetically
1111sealed
diacs are designed specifically for triggering
1111thyristors.They
demonstrate low breakover current at
1111breakover
voltage as they withstand peak pulse
1111current,The
breakover symmetry is within three
1111volts(DB3,DB4).
These diacs are intended for use in
CCCthyrisitors
phase control,circuits for lamp dimming,
FFFI
universal motor speed control,and heat control.
DO-35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Power dissipation on printed
T
A
=50
o
C circuit (L=10mm)
Repetitive peak on-state
current
tp=20 S
f=120Hz
Symbols
DB3,DB4
UNITS
Pc
150.0
mW
I
TRM
T
J
T
STG
2.0
-40--- +125
-40--- +125
A
o
o
Operating junction temperature
Storage temperature
C
C
ELECTRICAL CHARACTERISTICS
Parameters
Test Conditions
Min
Breakover voltage
(NOTE
1)
V
BO
I+V
BO
I-
I-V
BO
I
VI
V
o
I
BO
t
r
I
R
C=22nf
(NOTE 2)
See FIG.1
C=22nf
(NOTE 2)
See FIG.1
I=(I
BO
to I
F
=10mA)
See FIG.1
See FIG.2
C=22nf
(NOTE 2)
See FIG.3
V
R
=0.5 V
BO
See FIG.1
DB3
28
32
36
±3.0
DB4
35
40
45
UNITS
Typ
Max
V
Breakover voltage symmetry
Dynamic breakover voltage
(NOTE 1)
Output voltage
(NOTE 1)
Breakover current
(NOTE 1)
Rise time
(NOTE 1)
Leakage current
(NOTE 1)
Max
Min
Min
Max
Typ
Max
V
V
V
A
S
A
www.galaxycn.com
5.0
5.0
100.0
1.5
10.0
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.
2.Connected in parallel w ith the devices
Document Number 0283003
BL
GALAXY ELECTRICAL
1.

DB3 Related Products

DB3 DB4
Description DIAC, 36V V(BO) Max, DIAC, 45V V(BO) Max,
Is it Rohs certified? conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknow
Maximum breakover voltage 36 V 45 V
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
surface mount NO NO
Trigger device type DIAC DIAC
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