HY5PS56421F-C4 datasheet, PDF - EEWORLD Datasheet

HY5PS56421F-C4: DescriptionDDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, FBGA-60; Categorystorage storage; File Size601KB，35 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY5PS56421F-C4 Overview

DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, FBGA-60

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	267 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	14 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	64MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	12 mm
Base Number Matches	1

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This document is a general product description and is subject to change without notice. Hynix Electronics does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev 1.0/ July. 2004

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