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D2898N04T

Description
Rectifier Diode, 1 Phase, 1 Element, 3885A, 400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size181KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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D2898N04T Overview

Rectifier Diode, 1 Phase, 1 Element, 3885A, 400V V(RRM), Silicon,

D2898N04T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionO-XEDB-N2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeO-XEDB-N2
Maximum non-repetitive peak forward current32300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature180 °C
Maximum output current3885 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D2898N
T
vj
= -40°C... T
vj max
V
RRM
I
FRMSM
T
C
= 100 °C
T
C
= 58 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= Tvj max, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= Tvj max, t
P
= 10 ms
I
FAVM
I
FSM
I²t
400 V
600 V
6100 A
2894
3885
37400
32300
7000
5200
A
A
A
A
10³A²s
10³A²s
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
Kenndaten
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Elektrische Eigenschaften
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
1000 A
i
F
10000 A
on-state characteristic
T
vj
= T
vj max
, i
F
= 4,5 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
F
V
(TO)
r
T
A=
B=
C=
D=
i
R
max.
0,95 V
0,66 V
0,06 mΩ
v
F
=
A
+
B
i
F
+
C
ln ( i
F
+
1 )
+
D
Sperrstrom
reverse current
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
i
F
T
vj
= T
vj max
, v
R
= V
RRM
-3,502E-02
7,865E-05
1,337E-01
-7,354E-03
max.
50 mA
cooling
Thermische
Kühlfläche/ /two-sidedsurface
Eigenschaften
beidseitig
Kühlfläche / cooling surface
beidseitig / two-sided,
θ
= 180°sin
beidseitig / two-sided, DC
R
thJC
max.
max.
max.
0,0254 °C/W
0,0240 °C/W
0,005 °C/W
180 °C
R
thCH
T
vj max
T
c op
T
stg
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpreßkraft
clamping force
Gewicht
weight
Kriechstrecke
creepage distance
Schwingfestigkeit
vibration resistance
-40...+150 °C
-40...+150 °C
Seite 2
page 2
F
G
typ.
12...24 kN
160 g
27 mm
f = 50 Hz
50 m/s²
prepared by: H.Sandmann
approved by: J.Przybilla
date of publication:
revision:
2007-10-22
2
BIP PPE4 / 2007-06-15, H.Sandmann
A 14/07
Seite/page
1/7

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