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BCR162F-E6433

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size328KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCR162F-E6433 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon

BCR162F-E6433 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)20
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
BCR162...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor
(R
1
= 4.7kΩ ,
R
2
= 4.7kΩ )
BCR162/F/L3
BCR162T
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR162
BCR162F
BCR162L3
BCR162T
Marking
WUs
WUs
WU
WUs
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
Pin Configuration
2=C
2=C
2=C
2=C
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
1
Aug-29-2003

BCR162F-E6433 Related Products

BCR162F-E6433 BCR162F-E6327
Description Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Minimum DC current gain (hFE) 20 20
Number of components 1 1
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.25 W 0.25 W
surface mount YES YES
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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