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DP3ED16MX8R8KY5-DP-XX50C

Description
EDO DRAM Module, 16MX8, 50ns, CMOS, PDSO32, STACK, LEADLESS, MODULE, TSOP-32
Categorystorage    storage   
File Size201KB,2 Pages
ManufacturerB&B Electronics Manufacturing Company
Download Datasheet Parametric Compare View All

DP3ED16MX8R8KY5-DP-XX50C Overview

EDO DRAM Module, 16MX8, 50ns, CMOS, PDSO32, STACK, LEADLESS, MODULE, TSOP-32

DP3ED16MX8R8KY5-DP-XX50C Parametric

Parameter NameAttribute value
MakerB&B Electronics Manufacturing Company
Parts packaging codeTSOP
package instructionATSOP,
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-G32
memory density134217728 bit
Memory IC TypeEDO DRAM MODULE
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX8
Package body materialPLASTIC/EPOXY
encapsulated codeATSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, PIGGYBACK, THIN PROFILE
Certification statusNot Qualified
Maximum seat height2.4892 mm
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1
16Mx8 50 - 60ns, TSOP Stack
30A228-10
A
High Density Memory Device
ADVANCED INFORMATION
DESCRIPTION:
The
M-Densus
series is a family of interchangeable memory
modules. The 64 Megabit DRAM is a member of this family
which utilizes the new and innovative space saving TSOP
stacking technology. The module is constructed with two
8 Meg x 8 EDO, 3.3 Volt DRAM’s available in a 128 Megabit
compatible pin-out.
The 64 Megabit based
M-Densus
modules have been
designed to fit in the same footprint as the 16 Meg x 8 DRAM
TSOP monolithic. This allows the memory board designer to
upgrade the memory in their products without redesigning the
memory board, thus saving time and money.
FEATURES:
Configurations Available:
128 Megabit: 16 Meg x 8
Access Times: 50, 60ns (max.)
3.3 Volt Supply
Common Data Inputs and Outputs
Extended Data Out Capability (EDO)
4K/8K 64ms Refresh
3 Variations of Refresh:
- RAS only Refresh
- CAS before RAS Refresh
- Hidden Refresh
Package: Leadless TSOP Module
M-Densus
128 Megabit CMOS
3.3V EDO DRAM
DP3ED16MX8RKY5
PIN-OUT DIAGRAM
PIN NAMES
A0 - A11
A0 - A12*
DQ0 - DQ7
CAS
RAS0 - RAS1
WE
OE
V
DD
V
SS
N.C.
Row Address:
A0 - A11
Column Address: A0 - A10
Refresh Address: A0 - A11
Row Address:
A0 - A12
Column Address: A0 - A9
Refresh Address: A0 - A12
Data In / Data Out
Column Address Strobe
Row Address Enables
Data Write Enable
Data Output Enable
Power Supply (+3.3V)
Ground
No Connect
FUNCTIONAL BLOCK DIAGRAM
*
A12 for 8K refresh device.
30A228-10
REV. A
This document contains information on a product under consideration for
development at Dense-Pac Microsystems, Inc. Dense-Pac reserves the right
to
c
hange or discontinue information on this product without prior notice.
1

DP3ED16MX8R8KY5-DP-XX50C Related Products

DP3ED16MX8R8KY5-DP-XX50C DP3ED16MX8R8KY5-DP-XX60C DP3ED16MX8RKY5-DP-XX60C DP3ED16MX8RKY5-DP-XX50C
Description EDO DRAM Module, 16MX8, 50ns, CMOS, PDSO32, STACK, LEADLESS, MODULE, TSOP-32 EDO DRAM Module, 16MX8, 60ns, CMOS, PDSO32, STACK, LEADLESS, MODULE, TSOP-32 EDO DRAM Module, 16MX8, 60ns, CMOS, PDSO32, STACK, LEADLESS, MODULE, TSOP-32 EDO DRAM Module, 16MX8, 50ns, CMOS, PDSO32, STACK, LEADLESS, MODULE, TSOP-32
Maker B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company B&B Electronics Manufacturing Company
Parts packaging code TSOP TSOP TSOP TSOP
package instruction ATSOP, ATSOP, ATSOP, ATSOP,
Contacts 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 50 ns 60 ns 60 ns 50 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
memory density 134217728 bit 134217728 bit 134217728 bit 134217728 bit
Memory IC Type EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE
memory width 8 8 8 8
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 32 32 32 32
word count 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 16MX8 16MX8 16MX8 16MX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code ATSOP ATSOP ATSOP ATSOP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, PIGGYBACK, THIN PROFILE SMALL OUTLINE, PIGGYBACK, THIN PROFILE SMALL OUTLINE, PIGGYBACK, THIN PROFILE SMALL OUTLINE, PIGGYBACK, THIN PROFILE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 2.4892 mm 2.4892 mm 2.4892 mm 2.4892 mm
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 -
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