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BC639-16

Description
NPN medium power transistors
Categorysemiconductor    Discrete semiconductor   
File Size93KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet View All

BC639-16 Overview

NPN medium power transistors

BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC637
BC639
BC637
BC639
Symbol
V
CEO
Value
60
80
60
80
5.0
1.0
625
5.0
800
12
−55
to +150
Unit
Vdc
1
EMITTER
3
BASE
Collector - Base Voltage
V
CBO
Vdc
Emitter - Base Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
Adc
mW
mW/°C
mW
mW/°C
°C
TO−92
CASE 29
STYLE 14
12
1
2
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC
63x
AYWW
G
G
BC63
9−16
AYWW
G
G
x
= 7 or 9
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
February, 2011
Rev. 1
1
Publication Order Number:
BC637/D
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