BD647 datasheet, PDF - EEWORLD Datasheet

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BD647: Description8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220; CategoryDiscrete semiconductor The transistor; File Size333KB，5 Pages; ManufacturerCOMSET; Websitehttp://comset.halfin.com/

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BD647 Overview

8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220

BD647 Parametric

Parameter Name	Attribute value
Maker	COMSET
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	8 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	62.5 W
surface mount	NO
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTORS

BD643/645/647/649/651

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a

TO-220 enveloppe. They are intended for output stages in audio equipment,

general amplifiers, and analogue switching application.

PNP complements are BD644, BD646, BD648, BD650 and BD652

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

BD643

BD645

BD647

BD649

BD651

BD643

BD645

BD647

BD649

BD651

BD643

BD645

BD647

BD649

BD651

BD643

BD645

BD647

BD649

BD651

BD643

BD645

BD647

BD649

BD651

Value

100

120

140

100

120

Unit

CBO

Collector-Base Voltage

CEO

Collector-Emitter Voltage

EBO

Emitter-Base Voltage

Collector Current

Collector Peak Current

Page 1 of 5

BD647 Related Products

	BD647	BD649	BD651
Description	8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220	8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220	POWER TRANSISTOR, TO-220
Maker	COMSET	COMSET	COMSET
Reach Compliance Code	unknow	unknow	unknow
Maximum collector current (IC)	8 A	8 A	8 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	750	750	750
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	62.5 W	62.5 W	62.5 W
surface mount	NO	NO	NO
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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