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BD651

Description
POWER TRANSISTOR, TO-220
CategoryDiscrete semiconductor    The transistor   
File Size333KB,5 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
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BD651 Overview

POWER TRANSISTOR, TO-220

BD651 Parametric

Parameter NameAttribute value
MakerCOMSET
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)8 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)62.5 W
surface mountNO
Nominal transition frequency (fT)100 MHz
SEMICONDUCTORS
BD643/645/647/649/651
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a
TO-220 enveloppe. They are intended for output stages in audio equipment,
general amplifiers, and analogue switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
60
80
100
120
140
45
60
80
100
120
5
Unit
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
12
A
Page 1 of 5

BD651 Related Products

BD651 BD647 BD649
Description POWER TRANSISTOR, TO-220 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
Maker COMSET COMSET COMSET
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 8 A 8 A 8 A
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750 750
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 62.5 W 62.5 W 62.5 W
surface mount NO NO NO
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
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