BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Suitable for :
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CER
V
EBO
V
CBO
V
CEX
I
C
I
B
P
T
T
J
T
S
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T
C
= 25°
V
BE
=+1.5 V
R
BE
=100Ω
Ratings
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Value
-60
-70
-65
-7
-100
-70
-90
-70
-15
-7
Unit
V
V
V
V
V
A
A
Watts
°C
117
-65 to +200
COMSET SEMICONDUCTORS
1/3
BDX18 – BDX18N
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
Ratings
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
I
C
=200 mA, I
B
=0
Min Typ Mx Unit
-60
-60
-90
-70
-70
-65
-
-
-
-
-
-
-
BDX18
BDX18N
BDX18
-
-
-
-
-
-
-
-
-
-
-
4
-
-
V
V
CEX(SUS)
I
C
=-100 mA, V
BE
=1.5 V
V
BDX18N
BDX18
-
-
-
-5
-10
-5
-10
-5
-1.8
-1.1
-
mA
V
V
MHz
mA
V
V
CER(SUS)
Collector-Emitter
Breakdown Voltage (*)
I
C
=-200 mA, R
BE
=100
Ω
V
CE
=-90 V, V
BE
=1.5 V
V
CE
=-60 V, V
BE
=1.5 V
T
CASE
=150°C
V
CE
=-70 V, V
BE
=1.5 V
V
CE
=-60 V, V
BE
=1.5 V
T
CASE
=150°C
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
I
CEX
Collector-Emitter Cutoff
Current
I
EBO
V
BE
V
CE(SAT)
f
T
Emitter-Base Cutoff Current
V
EB
=-7 V
Base-Emitter Voltage (*)
I
C
=-4.0 A, V
CE
=-4.0V
Collector-Emitter Saturation
I
C
=-4.0 A, I
B
=-0.4V
Voltage
Transition Frequency
I
C
=-1A, V
CE
=-10 V, f=1
MHz
COMSET SEMICONDUCTORS
2/3
BDX18 – BDX18N
Symbol
Ratings
Static Forward Current
Transfer Ratio (*)
Test Condition(s)
Min Typ Mx Unit
h
21E
V
CE
=-4.0 V, I
C
=-4.0 A
BDX18
BDX18N
20
-
70
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
rated by an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Emitter
Collector
COMSET SEMICONDUCTORS
3/3