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IRC540-008PBF

Description
Power Field-Effect Transistor, 29A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size54KB,1 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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IRC540-008PBF Overview

Power Field-Effect Transistor, 29A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRC540-008PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionFLANGE MOUNT, R-PSFM-T5
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)29 A
Maximum drain-source on-resistance0.077 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T5
JESD-609 codee2
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
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