3134-100M Rev A
3134-100M
100 Watts, 36 Volts, 100µs, 10%
Radar 3100-3400 MHz
GENERAL DESCRIPTION
The 3134-100M is an internally matched, COMMON BASE bipolar transistor
capable of providing 100 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 3100 to 3400 MHz band. This hermetically
solder-sealed transistor is specifically designed for S-band radar applications. It
utilizes gold metallization and emitter ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65
Emitter to Base Voltage (BV
ebo
)
3.0
Collector Current (I
c
)
17 A
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
V
V
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
°
SYMBOL
P
out
Gain
η
c
Droop
IRL
VSWR-S
VSWR-T
CHARACTERISTICS
Power Output
Power Gain
Collector Efficiency
Droop
Input Return Loss
Stability
Survivability
TEST CONDITIONS
F=3100-3400 MHz
Vcc = 36V
Pulse Width = 100 us
Duty Cycle = 10%
Pin = 16W
MIN
100
8.0
40
TYP
MAX
135
9.3
0.5
-7
1.5:1
2.0:1
UNITS
W
%
dB
dB
FUNCTIONAL CHARACTERISTICS @ 25°C
°
SYMBOL
BV
ebo
BV
ces
Ices
θjc
Tstg
CHARACTERISTICS
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Storage Temperature
TEST CONDITIONS
Ie = 30 mA
Ic = 60 mA
Vce = 36 V
MIN
3.0
65
5
0.35
-65
200
TYP
MAX
UNITS
V
V
mA
°C/W
°C
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
3134-100M Rev A
3134 – 100M
Input and Output Impedance
Impedance Data
Freq (GHz)
3.1
3.2
3.3
3.4
Zsource
12.15 – j3.61
11.78 - j5.17
10.84 - j6.46
9.58 - j7.29
Zload
4.16 - j5.98
4.17- j5.69
4.21 - j5.42
4.26 - j5.16
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW.MICROSEMI.COM
OR CONTACT OUR FACTORY DIRECTLY.
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