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MT41K256M8DA-125IT:KTR

Description
DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78
Categorystorage    storage   
File Size3MB,212 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT41K256M8DA-125IT:KTR Overview

DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78

MT41K256M8DA-125IT:KTR Parametric

Parameter NameAttribute value
MakerMicron Technology
package instructionTFBGA,
Reach Compliance Codecompliant
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B78
length10.5 mm
memory density2147483648 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals78
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
organize256MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)1.45 V
Minimum supply voltage (Vsup)1.283 V
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm
Base Number Matches1
2Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K512M4 – 64 Meg x 4 x 8 banks
MT41K256M8 – 32 Meg x 8 x 8 banks
MT41K128M16 – 16 Meg x 16 x 8 banks
Description
The 1.35V DDR3L SDRAM device is a low-voltage ver-
sion of the 1.5V DDR3 SDRAM device. Refer to the
DDR3 (1.5V) SDRAM data sheet specifications when
running in 1.5V compatible mode.
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Options
• Configuration
– 512 Meg x 4
– 256 Meg x 8
– 128 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (8mm x 10.5mm)
Rev. M, K
– 78-ball FBGA (9mm x 11.5mm)
Rev. D
• FBGA package (Pb-free) – x16
– 96-ball FBGA (9mm x 14mm)
Rev. D
– 96-ball FBGA (8mm x 14mm)
Rev. K
• Timing – cycle time
– 1.071ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.875ns @ CL = 7 (DDR3-1066)
• Operating temperature
– Commercial (0°C
T
C
+95°C)
– Industrial (–40°C
T
C
+95°C)
• Revision
Marking
512M4
256M8
128M16
DA
HX
Features
V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
Backward-compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS (READ) latency (CL)
Programmable posted CAS additive latency (AL)
Programmable CAS (WRITE) latency (CWL)
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
T
C
of 0°C to +95°C
– 64ms, 8192-cycle refresh at 0°C to +85°C
– 32ms at +85°C to +95°C
Self refresh temperature (SRT)
HA
JT
-107
-125
-15E
-187E
None
IT
:D/ :M / :K
Table 1: Key Timing Parameters
Speed Grade
-107
1, 2, 3
-125
1, 2
-15E
1
-187E
Notes:
Data Rate (MT/s)
1866
1600
1333
1066
Target
t
RCD-
t
RP-CL
13-13-13
11-11-11
9-9-9
7-7-7
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-107).
PDF: 09005aef83ed2952
2Gb_DDR3L.pdf - Rev. K 9/13 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT41K256M8DA-125IT:KTR Related Products

MT41K256M8DA-125IT:KTR MT41K128M16JT-125XIT:K MT41K128M16JT-125XIT:KT
Description DDR DRAM, 256MX8, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 DDR DRAM,
Reach Compliance Code compliant not_compliant compliant
ECCN code EAR99 EAR99 EAR99
Memory IC Type DDR DRAM DDR DRAM DDR DRAM
Maker Micron Technology Micron Technology -
package instruction TFBGA, 8 X 14 MM, LEAD FREE, FBGA-96 -
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST -
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH -
JESD-30 code R-PBGA-B78 R-PBGA-B96 -
length 10.5 mm 14 mm -
memory density 2147483648 bit 2147483648 bit -
memory width 8 16 -
Number of functions 1 1 -
Number of ports 1 1 -
Number of terminals 78 96 -
word count 268435456 words 134217728 words -
character code 256000000 128000000 -
Operating mode SYNCHRONOUS SYNCHRONOUS -
organize 256MX8 128MX16 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code TFBGA TFBGA -
Package shape RECTANGULAR RECTANGULAR -
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH -
Maximum seat height 1.2 mm 1.2 mm -
self refresh YES YES -
Maximum supply voltage (Vsup) 1.45 V 1.45 V -
Minimum supply voltage (Vsup) 1.283 V 1.283 V -
Nominal supply voltage (Vsup) 1.35 V 1.35 V -
surface mount YES YES -
technology CMOS CMOS -
Terminal form BALL BALL -
Terminal pitch 0.8 mm 0.8 mm -
Terminal location BOTTOM BOTTOM -
width 8 mm 8 mm -
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