APT35GN120L2DQ2 datasheet, PDF

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APT35GN120L2DQ2: DescriptionInsulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel, TO-264MAX, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size219KB，9 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT35GN120L2DQ2 Overview

Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel, TO-264MAX, 3 PIN

APT35GN120L2DQ2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	TO-264MA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	94 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	30 V
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	379 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	465 ns
Nominal on time (ton)	46 ns
Base Number Matches	1

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TYPICAL PERFORMANCE CURVES

APT35GN120L2DQ2

APT35GN120L2DQ2G*

APT35GN120L2DQ2(G)

1200V

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s

have a very short, low amplitude tail current and low Eoff. The Trench Gate design

results in superior V

CE(on)

performance. Easy paralleling results from very tight

parameter distribution and slightly positive V

CE(on)

temperature coefﬁcient. Built-in

gate resistance ensures ultra-reliable operation. Low gate charge simpliﬁes gate drive

design and minimizes losses.

TO-264

Max

•

1200V NPT Field Stop

Trench Gate: Low V

CE(on)

Easy Paralleling

10µs Short Circuit Capability

Intergrated Gate Resistor: Low EMI, High Reliability

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

Symbol

CES

SSOA

STG

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

= 25°C

Continuous Collector Current @ T

= 110°C

Pulsed Collector Current

All Ratings: T

= 25°C unless otherwise speciﬁed.

APT35GN120L2DQ2(G)

UNIT

Volts

1200

±30

105

105A @ 1200V

379

-55 to 150

300

Amps

@ T

= 150°C

Switching Safe Operating Area @ T

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

(BR)CES

GE(TH)

CE(ON)

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

= 0V, I

= 250µA)

Gate Threshold Voltage

= V

, I

= 1mA, T

= 25°C)

MIN

TYP

MAX

Units

1200

1.4

5.8

1.7

1.9

6.5

2.1

Collector-Emitter On Voltage (V

= 15V, I

= 35A, T

= 25°C)

Collector-Emitter On Voltage (V

= 15V, I

= 35A, T

= 125°C)

Collector Cut-off Current (V

= 1200V, V

= 0V, T

= 25°C)

Volts

CES

GES

GINT

200

TBD

600

Gate-Emitter Leakage Current (V

= ±20V)

Intergrated Gate Resistor

Ω

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7604

Rev B

10-2005

Collector Cut-off Current (V

= 1200V, V

= 0V, T

= 125°C)

µA

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