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MT55L512Y36PT-10

Description
ZBT SRAM, 512KX36, 5ns, CMOS, PQFP100, PLASTIC, TQFP-100
Categorystorage    storage   
File Size787KB,37 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT55L512Y36PT-10 Overview

ZBT SRAM, 512KX36, 5ns, CMOS, PQFP100, PLASTIC, TQFP-100

MT55L512Y36PT-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeQFP
package instructionPLASTIC, TQFP-100
Contacts100
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time5 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.03 A
Minimum standby current3.14 V
Maximum slew rate0.21 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm
Base Number Matches1
0.16µm Process
ADVANCE
18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED ZBT SRAM
18Mb ZBT SRAM
FEATURES
High frequency and 100 percent bus utilization
Fast cycle times
Single +3.3V ±5% or +2.5V ±5% power supply (V
DD
)
Separate +3.3V or +2.5V isolated output buffer sup-
ply (V
DD
Q)
Advanced control logic for minimum control signal
interface
Individual BYTE WRITE controls may be tied LOW
Single R/W# (read/write) control pin
CKE# pin to enable clock and suspend operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os, and control signals
Internally self-timed, fully coherent WRITE
Internally self-timed, registered outputs to elimi-
nate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Pin and ball/function compatibility with 2Mb, 4Mb,
and 8Mb ZBT SRAM
®
MT55L1MY18P, MT55V1MV18P,
MT55L512Y32P, MT55V512V32P,
MT55L512Y36P, MT55V512V36P
3.3V V
DD
, 3.3V or 2.5V I/O; 2.5V V
DD
, 2.5V I/O
100-Pin TQFP
1
165-Ball FBGA
2
1. JEDEC Standard MS-025 BHA (LQFP).
2. JEDEC Standard MS-216 (Var. CAB-1)
OPTIONS
TQFP
MARKING
OPTIONS
• Packages
100-pin TQFP
165-ball FBGA
• Operating Temperature Range
Commercial (+10°C
T
J
+110°C)
TQFP
MARKING
T
F*
• Timing (Access/Cycle/MHz)
3.3V V
DD
, 3.3V, or 2.5V I/O, and + 2.5V V
DD
, 2.5 V I/O
3ns/5ns/200 MHz
-5
3.5ns/6ns/166 MHz
-6
4.2ns/7.5ns/133 MHz
-7.5
5ns/10ns/100 MHz
-10
• Configurations
3.3V V
DD
, 3.3V, or 2.5V I/O
1 Meg x 18
MT55L1MY18P
512K x 32
MT55L512Y32P
512K x 36
MT55L512Y36P
2.5V V
DD
, 2.5V I/O
1 Meg x 18
MT55V1MV18P
512K x 32
MT55V512V32P
512K x 36
MT55V512V36P
None
* A Part Marking Guide for the FBGA devices can be found on Micron’s
Web site—http://www.micron.com/numberguide.
Part Number Example:
MT55L512Y36PT-10
18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM
MT55L1MY18P_16_A.fm - Rev A; Pub 6/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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