MMQA, SZMMQA Quad
Common Anode Series
SC-74 Quad Monolithic
Common Anode
Transient Voltage Suppressors for ESD
Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Features
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SC−74 QUAD TRANSIENT
VOLTAGE SUPPRESSOR
24 WATTS PEAK POWER
5.6
−
33 VOLTS
•
SC−74 Package Allows Four Separate Unidirectional Configurations
•
Peak Power
−
Min. 24 W @ 1.0 ms (Unidirectional),
•
•
•
•
•
•
per Figure 5 Waveform
Peak Power
−
Min. 150 W @ 20
ms
(Unidirectional),
per Figure 6 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 2.0
mA
ESD Rating of Class 3B (exceeding 16 kV) per the Human Body
Model
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
SC−74
CASE 318F
STYLE 1
PIN ASSIGNMENT
PIN 1.
2.
3.
4.
5.
6.
CATHODE
ANODE
CATHODE
CATHODE
ANODE
CATHODE
1
2
3
6
5
4
MARKING DIAGRAM
xxxMG
G
xxx
M
G
= Specific Device Code
= Date Cade
= Pb−Free Package
(Note: Microdot may be in either location)
DEVICE MARKING & ORDERING
INFORMATION
See specific marking and ordering information in the device
marking and ordering information table on page 6 of this data
sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
February, 2012
−
Rev. 10
1
Publication Order Number:
MMQA/D
MMQA, SZMMQA Quad Common Anode Series
THERMAL CHARACTERISTICS
(T
A
= 25°C Unless Otherwise Noted)
Characteristic
Peak Power Dissipation @ 1.0 ms (Note 1)
@ T
A
≤
25°C
Peak Power Dissipation @ 20
ms
(Note 2)
@ T
A
≤
25°C
Total Power Dissipation on FR-5 Board (Note 3)
@ T
A
= 25°C
Thermal Resistance from Junction−to−Ambient
Total Power Dissipation on Alumina Substrate (Note 4)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance from Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature
−
Maximum (10 Second Duration)
1.
2.
3.
4.
Non-repetitive current pulse per Figure 5 and derate above T
A
= 25°C per Figure 4.
Non-repetitive current pulse per Figure 6 and derate above T
A
= 25°C per Figure 4.
FR-5 = 1.0 x 0.75 x 0.62 in.
Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Symbol
P
pk
P
pk
P
D
R
qJA
P
D
Value
24
150
225
1.8
556
300
2.4
417
−55
to
+150
260
Unit
W
W
MW
mW/°C
°C/W
MW
mW/°C
°C/W
°C
°C
R
qJA
T
J
, T
stg
T
L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless Otherwise Noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (V
F
= 0.9 V Max @ I
F
= 10 mA)
Max
Reverse
Leakage
Current
Max Zener
Impedance
(Note 7)
Z
ZT
@ I
ZT
(W) (mA)
400
300
300
80
80
80
80
80
80
80
100
125
200
Max
Reverse
Voltage @
I
RSM
(Note 6)
(Clamping
Voltage)
V
RSM
(V)
8.0
9.0
9.8
17.3
18.6
21.7
26
28.6
30.3
31.7
34.6
39
48.6
Capacitance
@ 0 Volt
Bias, 1 MHz
Breakdown Voltage
V
ZT
(Note 5)
(V)
Device
(Note 8)
MMQA5V6T
MMQA6V2T
MMQA6V8T
MMQA12VT
MMQA13VT
MMQA15VT
MMQA18VT
MMQA20VT
MMQA21VT
MMQA22VT
MMQA24VT
MMQA27VT
MMQA33VT
Min
5.32
5.89
6.46
11.4
12.4
14.3
17.1
19
20
20.9
22.8
25.7
31.4
Nom
5.6
6.2
6.8
12
13
15
18
20
21
22
24
27
33
Max
5.88
6.51
7.14
12.6
13.7
15.8
18.9
21
22.1
23.1
25.2
28.4
34.7
@ I
ZT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
I
R
(nA)
2000
700
500
75
75
75
75
75
75
75
75
75
75
V
R
(V)
3.0
4.0
4.3
9.1
9.8
11
14
15
16
17
18
21
25
Max
Reverse
Surge
Current
I
RSM
(A)
3.0
2.66
2.45
1.39
1.29
1.1
0.923
0.84
0.792
0.758
0.694
0.615
0.504
Maximum
Temperature
Coefficient
of V
Z
(mV/°C)
1.26
10.6
10.9
14
15
16
19
20.1
21
22
25
28
37
(pF)
Min
−
−
100
−
−
−
−
−
−
−
−
−
−
Max
−
−
250
−
−
−
−
−
−
−
−
−
−
5. V
Z
measured at pulse test current I
T
at an ambient temperature of 25°C.
6. Surge current waveform per Figure 5 and derate per Figure 4.
7. Z
ZT
is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I
Z(AC)
= 0.1 I
Z(DC)
,
with AC frequency = 1 kHz.
8. Include SZ-prefix devices where applicable.
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MMQA, SZMMQA Quad Common Anode Series
TYPICAL CHARACTERISTICS
300
250
C, CAPACITANCE (pF)
200
150
100
50
0
5.6
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF V
Z
NOM
10,000
1,000
I R , LEAKAGE (nA)
+150°C
100
+25°C
10
-40°C
0
6.8
12
20
27
V
Z
, NOMINAL ZENER VOLTAGE (V)
33
5.6
6.8
20
27
33
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 1. Typical Capacitance
Figure 2. Typical Leakage Current
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25
°
C
300
PD , POWER DISSIPATION (mW)
250
ALUMINA SUBSTRATE
200
150
100
FR‐5 BOARD
50
0
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
T
A
, AMBIENT TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. Steady State Power Derating Curve
Figure 4. Pulse Derating Curve
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MMQA, SZMMQA Quad Common Anode Series
TYPICAL CHARACTERISTICS
% OF PEAK PULSE CURRENT
t
r
100
VALUE (%)
PEAK VALUE — I
RSM
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF I
RSM
.
t
r
≤
10
ms
100
90
80
70
60
50
40
30
20
10
0
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
I
RSM
HALF VALUE —
2
50
t
P
0
t
P
0
1
2
3
t, TIME (ms)
4
0
20
40
t, TIME (ms)
60
80
Figure 5. 10
×
1000
ms
Pulse Waveform
Figure 6. 8
×
20
ms
Pulse Waveform
100
PPK , PEAK SURGE POWER (W)
RECTANGULAR
WAVEFORM, TA = 25°C
Ppk PEAK SURGE POWER (W)
200
180
160
140
120
100
80
60
40
20
0
10
×
100 WAVEFORM AS PER FIGURE
NO TAG
8
×
20 WAVEFORM AS PER FIGURE
NO TAG
10
UNIDIRECTIONAL
1.0
0.1
1.0
10
PW, PULSE WIDTH (ms)
100
1000
5.6
6.8
12
20
NOMINAL V
Z
27
33
Figure 7. Maximum Non−Repetitive Surge
Power, P
pk
versus PW
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is the clamping voltage at I
Z
(pk).
Figure 8. Typical Maximum Non−Repetitive
Surge Power, P
pk
versus V
Z
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MMQA, SZMMQA Quad Common Anode Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SC-74
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. A simplified example of
MMQA/SZMMQA Series Device applications is illustrated
below.
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
I/O
C
D
FUNCTIONAL
DECODER
GND
MMQA/SZMMQA SERIES DEVICE
Figure 9. Computer Interface Protection
V
DD
V
GG
ADDRESS BUS
RAM
ROM
DATA BUS
I/O
CPU
CLOCK
CONTROL BUS
GND
MMQA/SZMMQA
SERIES DEVICE
Figure 10. Microprocessor Protection
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