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MT47H64M8JN-25E:G

Description
DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60
Categorystorage    storage   
File Size2MB,133 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT47H64M8JN-25E:G Overview

DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60

MT47H64M8JN-25E:G Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codenot_compliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee0
length10 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize64MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)235
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.007 A
Maximum slew rate0.215 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead/Silver (Sn/Pb/Ag)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
Base Number Matches1
512Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H128M4 – 32 Meg x 4 x 4 banks
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
Features
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths: 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
• Configuration
– 128 Meg x 4 (32 Meg x 4 x 4 banks)
– 64 Meg x 8 (16 Meg x 8 x 4 banks)
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm) Rev. G
– 84-ball FBGA (8mm x 12.5mm) Rev. H
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 10mm) Rev. G
– 60-ball FBGA (8mm x 10mm) Rev. H
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm) Rev. G
• FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 10mm) Rev. G
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Commercial (0°C
T
C
+85°C)
2
– Industrial (–40°C
T
C
+95°C;
–40°C
T
A
+85°C)
• Revision
Notes:
Marking
128M4
64M8
32M16
HR
NF
CF
SH
HW
JN
-187E
-25E
-3
None
L
None
IT
:G/:H
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
2. For extended CT operating temperature,
see Table 11 (page 29), Note 7.
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed Grade
-187E
-25E
-3
CL = 3
400
400
400
CL = 4
533
533
533
CL = 5
800
800
667
CL = 6
800
800
n/a
CL = 7
1066
n/a
n/a
t
RC
(ns)
54
55
55
PDF: 09005aef85651470
512MbDDR2.pdf - Rev. Y 06/17 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT47H64M8JN-25E:G Related Products

MT47H64M8JN-25E:G MT47H32M16NF-25E:H MT47H32M16HR-25E:G MT47H32M16HR-3:G MT47H32M16HW-25E:G
Description DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84
Is it lead-free? Contains lead Lead free Lead free Lead free Contains lead
Is it Rohs certified? incompatible conform to conform to conform to incompatible
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code BGA BGA BGA BGA BGA
package instruction TFBGA, BGA60,9X11,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32 8 X 12.50 MM, FBGA-84
Contacts 60 84 84 84 84
Reach Compliance Code not_compliant not_compliant compliant compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.4 ns 0.4 ns 0.4 ns 0.45 ns 0.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 400 MHz 400 MHz 400 MHz 333 MHz 400 MHz
I/O type COMMON COMMON COMMON COMMON COMMON
interleaved burst length 4,8 4,8 4,8 4,8 4,8
JESD-30 code R-PBGA-B60 R-PBGA-B84 R-PBGA-B84 R-PBGA-B84 R-PBGA-B84
JESD-609 code e0 e1 e1 e1 e0
length 10 mm 12.5 mm 12.5 mm 12.5 mm 12.5 mm
memory density 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 8 16 16 16 16
Number of functions 1 1 1 1 1
Number of ports 1 1 1 1 1
Number of terminals 60 84 84 84 84
word count 67108864 words 33554432 words 33554432 words 33554432 words 33554432 words
character code 64000000 32000000 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C
organize 64MX8 32MX16 32MX16 32MX16 32MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA
Encapsulate equivalent code BGA60,9X11,32 BGA84,9X15,32 BGA84,9X15,32 BGA84,9X15,32 BGA84,9X15,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 235 260 260 260 235
power supply 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES
Continuous burst length 4,8 4,8 4,8 4,8 4,8
Maximum standby current 0.007 A 0.01 A 0.007 A 0.007 A 0.007 A
Maximum slew rate 0.215 mA 0.215 mA 0.215 mA 0.215 mA 0.215 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER
Terminal surface Tin/Lead/Silver (Sn/Pb/Ag) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead/Silver (Sn/Pb/Ag)
Terminal form BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30 30 30
width 8 mm 8 mm 8 mm 8 mm 8 mm
Base Number Matches 1 1 1 - -

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