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S72WS256NE0BFWBB0

Description
Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, FBGA-137
Categorystorage    storage   
File Size5MB,213 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Environmental Compliance
Download Datasheet Parametric View All

S72WS256NE0BFWBB0 Overview

Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, FBGA-137

S72WS256NE0BFWBB0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSPANSION
Parts packaging codeBGA
package instructionTFBGA,
Contacts137
Reach Compliance Codecompliant
Other featuresMOBILE SDRAM IS ORGANIZED AS 4M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 codeR-PBGA-B137
JESD-609 codee1
length12 mm
memory density268435456 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals137
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width9 mm
Base Number Matches1
S72WS256N based MCPs
Stacked Multi-Chip Product (MCP)
256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only,
Simultaneous Read/Write, Burst Mode Flash Memory
with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile
SDRAM on Split Bus
ADVANCE
Distinctive Characteristics
MCP Features
Power supply voltage of 1.7 to 1.95V
Flash burst frequency: 54 MHz
Mobile SDRAM burst frequency: 104 MHz
Package:
— 9.0 x 12.0 mm
Operating Temperature
— –25°C to +85°C (wireless)
High Performance
Flash access time: 70ns
General Description
The S72WS series is a product line of stacked Multi-Chip Product (MCP) packages
and consists of:
One or two (in this case, one die is used as code and the other as data) flash
memory dies
One Mobile SDRAM die
Separate bus for Flash and Mobile SDRAM: 137-ball pinout
The products covered by this document are listed in the table below. For details
about their specifications, please refer to the individual constituent datasheets for
further details:
Flash Memory Density
256Mb
Mobile
SDRAM
Density
128Mb
256Mb
S72WS256ND0
S72WS256NE0
512Mb
S72WS256NDE
S72WS256NEE
Publication Number
S72WS256N_00
Revision
A
Amendment
0
Issue Date
August 26, 2004

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