PHOTO DIODE SILICON PIN LED LAMPS
Package Dimension
LPD3330
SERIES
Description
The LPD3330 series are silicon planar
P/N photodiodes incorporated in plastic
package that simultaneously serve as
filter and are also Transparent for infrared
emission their terminals are soldering
tabs arranged in 2.54mm center to center
spacing due to their design the diodes
can vertically be assembled on pc boards
arrays can be realized by multiple
arrangement versatile photodetectors are
suitable for diodes as well as voltaic cell
operation the signal noise ratio is
particularly favorable even at low
illuminance the P/N photodiode are
outstanding for low junction capacitance
high cut-off frequency and fast switching
times.
They are particularly suitable for IR
sound transmission and remote control
the cathode of LPD3330 photodiode is
marked by a stamping on the package
edge
5.0
5.9
7.6
8.6
1.5MAX
□
0.5
TYP
25.0MIN
2.54TYP
1.0MIN
NOTE:1.All dimension are In millimeters tolerance Is
±
0.25 unless otherwise noted
2.Specifications are subject to change without notice
•
MAXIMUM RATINGS (TA=25
℃
)
Characteristic
Reverse Break Down Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
BR
PD
Topr
Tstg
Rating
30
150
nit
V
mW
-
30
﹣
+60
-
40
﹣
+60
℃
℃
•
ELECTRICAL CHARACTERISTICS AT (TA=
℃
)
Characteristic
Dark Current
Short Circuit Current
Symbol
I
D
Isc
Test Condition
V
R
=10V
Ee=0mW/c㎡
V
R
=5V
λ
P
=940nm
Ee=0.5mW/c㎡
Min
－
1.5
Typ
1.0
2.0
Max
30
－
Unit
nA
uA
Open Circuit Voltage
Total Capacitance
Peak Wavelength of Max Sensitivity
Rise Time,Fall Time
DOC.NO
:
QW0905-LPD3330
Voc
C
T
λ
P
=940nm
Ee=0.5mW/c㎡
V
R
=3V f=1MHZ Ee=0mW/c㎡
_
－
－
350
20
940
50
－
－
－
－
mV
pF
nm
ns
λ
smax
tr,tf
V
R
=10V R
L
=1KΩ
REV:B
－
Date:17
-
Aug
- 2005
Embedded System
京公网安备 11010802033920号
EEWORLD
