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SS36_NL

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size49KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
Download Datasheet Parametric View All

SS36_NL Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

SS36_NL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDO-214AB
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation2.27 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SS32-S310
SS32 - S310
Features
Metal to silicon rectifiers, majority
carrier conduction.
Low forward voltage drop.
Easy pick and place.
High surge current capability.
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
32
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20
33
30
Value
34 35
40 50
36
60
38
80
39 310
90 100
Units
V
A
A
°C
°C
3.0
100
-55 to +150
-55 to +150
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Lead
Parameter
Value
2.27
55
17
Units
W
°C/W
°C/W
*
Device mounted on FR-4 PCB 0.55 x 0.55" (14 x 14 mm).
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
32
Forward Voltage @ 3.0 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
33
500
20
Device
34 35
36
0.5
10
38
39
850
310
750
Units
mV
mA
mA
2001
Fairchild Semiconductor Corporation
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