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L10451-72

Description
Laser Diode, 808nm
CategoryLED optoelectronic/LED    photoelectric   
File Size326KB,4 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Download Datasheet Parametric Compare View All

L10451-72 Overview

Laser Diode, 808nm

L10451-72 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ConfigurationSINGLE
Number of functions1
Maximum operating temperature30 °C
Minimum operating temperature
Optoelectronic device typesLASER DIODE
peak wavelength808 nm
Maximum threshold current350 mA
Base Number Matches1
CW LASER DIODES
L10452 , L10451 , L8763 , L8828 SERIES
PRELIMINARY DATA
High radiant flux from a single chip
FEATURES
High radiant flux and its density(CW)
L10452 series : 0.5 W / 50
µ
m
L10451 series : 1 W / 100
µ
m
L8763 series : 1 W / 50
µ
m
L8828 series : 2 W / 100
µ
m
High stability
Long life
Compact
APPLICATIONS
Pumping source for solid state lasers
Printing
Medical instrument
Measuring instrument
Material Processing
Marking
HAMAMATSU CW laser diodes, L10452, L10451, L8763, L8828 series feature high radiant flux of 0.5 to 2.0 W
under CW operation. As this is single chip and single element type, emitting area is small (50
µ
m to 100
µ
m X 1
µ
m). Therefore, it is easy to focus on to a small spot with optics. It can be used for various applications such as
pumping of solid lasers, printers, medical instruments etc.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.

L10451-72 Related Products

L10451-72 L10452-72 L10452-42 L10452-62 L10452-04 L10451-04 L10451-07 L10452-06 L10452-07 L10451-42
Description Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm Laser Diode, 808nm
Reach Compliance Code unknow unknown unknown unknown unknown unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Number of functions 1 1 1 1 1 1 1 1 1 1
Maximum operating temperature 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C 30 °C
Optoelectronic device types LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE LASER DIODE
peak wavelength 808 nm 808 nm 808 nm 808 nm 808 nm 808 nm 808 nm 808 nm 808 nm 808 nm
Maximum threshold current 350 mA 150 mA 150 mA 150 mA 150 mA 350 mA 350 mA 150 mA 150 mA 350 mA
Base Number Matches 1 1 1 1 1 1 1 - - -
Maker - Hamamatsu Hamamatsu Hamamatsu - Hamamatsu - Hamamatsu Hamamatsu Hamamatsu

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