LL101A THUR LL101C
S E M I C O N D U C T O R
SMALL SIGNAL SCHOTTKY DIODES
SMALL SIGNAL
CHOTTKY DIODES
WWW.JIFUSEMICON.COM
FEATURES
For general purpose applications
The LL101 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop
and fast switching make it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level applications
These diodes are also available in the DO-35 case with the type
designation SD101A to SD101C ,in the SOD-123 case type with the type designation
SD101AW to SD101CW and in the SOD-323 case type with the type designation
SD101AWS to SD101CWS,in the Micro-MELF case with type designation MCL101 to MCL103
JF
Mini-MELF
MECHANICAL DATA
Case
:
Mini-MELF glass case(SOD-80 )
Weight
:
Approx. 0.05 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak Reverse Voltage
Value
60
50
40
400
1)
2.0
125
-55 to+150
Units
V
V
mW
A
C
C
LL101A
LL101B
LL101C
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10
m
s square wave
Junction temperature
Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
V
RRM
V
RRM
V
RRM
P
tot
I
FSM
T
J
T
STG
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
Reverse breakover voltage
at I
R
=10
m
A
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101B
LL101C
Min.
60
50
40
Typ.
Max.
Unis
V
V
V
Leakage current at V
R
=50V
V
R
=40V
V
R
=30V
Forward voltage drop at I
F
=1mA
I
F
=15mA
VRRM
VRRM
VRRM
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
Junction Capacitance at V
R
=0V ,f=1MHz
LL101A
C
J
C
J
C
J
Reverse Recovery time at I
F
=I
R
=5mA,recover to 0.1
I
R
t
rr
200
200
200
0.41
0.4
0.39
1
0.95
0.9
2.0
2.1
2.2
1
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
ns
2-37
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
RATINGS AND CHARACTERISTIC CURVES LL101A THR U LL101C
Figure 1. Typical variation of forward. current vs.fwd.
Voltage for primary conduction through the
schottky barrier
mA
Figure 2. Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
mA
A
A
B
C
B
C
I
F
I
F
V
F
Figure 3.Typical variation of reverse current
at versus temperature
mA
V
F
Figure 4. Typical capacitance curve as a function
of reverse voltage
mA
A
B
C
I
R
I
R
V
R
V
R
2-38
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM
SMALL SIGNAL
CHOTTKY DIODES
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