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PPF048ME3

Description
Power Field-Effect Transistor, 35A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
CategoryDiscrete semiconductor    The transistor   
File Size134KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

PPF048ME3 Overview

Power Field-Effect Transistor, 35A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

PPF048ME3 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, S-XSFM-P3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-XSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
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PPF048M (#45787)
N Channel MOSFET
Division
Mil-Spec
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Qual Data
Contact Microsemi
Datasheet
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Package
Maximum Electrical Rating
Breakdown Voltage Drain-to-Source
Drain Current (Continuous)
(T
A
=25ºC)
(T
A
=100ºC)
Power Dissipation
Thermal Resistance, Junction to Case
Symbol
B
VDSS
Max
55
V
Unit
I
D
1
I
D
2
P
D
R
θJC
35
35
125
1
A
A
W
ºC/Watt
Electrical Rating
Symbol Min Typ Max
Unit
Static Drain to Source "on" Resistance R
DS(on)
0.028 Ohm
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PPF048ME3 Related Products

PPF048ME3 PPF048M
Description Power Field-Effect Transistor, 35A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Power Field-Effect Transistor, 35A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
package instruction FLANGE MOUNT, S-XSFM-P3 FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (ID) 35 A 35 A
Maximum drain-source on-resistance 0.028 Ω 0.028 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA
JESD-30 code S-XSFM-P3 S-XSFM-P3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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