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SYS8512FK-20

Description
SRAM Module, 512KX8, 20ns, CMOS, PDIP32
Categorystorage    storage   
File Size426KB,8 Pages
ManufacturerSyntaq Technology Inc
Download Datasheet Parametric Compare View All

SYS8512FK-20 Overview

SRAM Module, 512KX8, 20ns, CMOS, PDIP32

SYS8512FK-20 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionDIP, DIP32,.6
Reach Compliance Codeunknown
Maximum access time20 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T32
JESD-609 codee0
memory density4194304 bit
Memory IC TypeSRAM MODULE
memory width8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum standby current0.06 A
Minimum standby current4.5 V
Maximum slew rate0.44 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Base Number Matches1

SYS8512FK-20 Related Products

SYS8512FK-20 SYS8512FKI-35 SYS8512FKLI-45 SYS8512FKL-35 SYS8512FKLI-35
Description SRAM Module, 512KX8, 20ns, CMOS, PDIP32 SRAM Module, 512KX8, 35ns, CMOS, PDIP32 SRAM Module, 512KX8, 45ns, CMOS, PDIP32 SRAM Module, 512KX8, 35ns, CMOS, PDIP32 SRAM Module, 512KX8, 35ns, CMOS, PDIP32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction DIP, DIP32,.6 DIP, DIP32,.6 DIP, DIP32,.6 DIP, DIP32,.6 DIP, DIP32,.6
Reach Compliance Code unknown unknown unknown unknown unknow
Maximum access time 20 ns 35 ns 45 ns 35 ns 35 ns
I/O type COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PDIP-T32 R-PDIP-T32 R-PDIP-T32 R-PDIP-T32 R-PDIP-T32
JESD-609 code e0 e0 e0 e0 e0
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bi
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
memory width 8 8 8 8 8
Number of terminals 32 32 32 32 32
word count 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 70 °C 85 °C
Minimum operating temperature - -40 °C -40 °C - -40 °C
organize 512KX8 512KX8 512KX8 512KX8 512KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.06 A 0.06 A 0.002 A 0.002 A 0.002 A
Minimum standby current 4.5 V 4.5 V 2 V 2 V 2 V
Maximum slew rate 0.44 mA 0.44 mA 0.44 mA 0.44 mA 0.44 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
Maker - - Syntaq Technology Inc Syntaq Technology Inc Syntaq Technology Inc
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