BTS 630
PWM Power Unit
The device allows continuous power control for lamps,LEDs
or inductive loads.
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Highside switch
Overtemperatur protection
Short circuit / overload protection through pulse widt
reduction and overload shutdown
Load dump protection
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
Reverse battery protection 1)
Timing frequency adjustable
Controlled switching rise and fall times
Maximum current internally limited
Protection against loss of GND 2)
Electrostatic discharge (ESD) protection
Package: TO220/7 and TO220/7 E3128 (SMD), Pin 4 is
shorted to the mounting flange
7
1
Standard
Note:
Switching frequency is programmed with an external capacitor.
Type
Ordering Code
Marking
Package
BTS630
(Standard)
BTS630
Maximum Ratings
Q67060-S6305-A2
Q67060-S6305-A3
-
-
TO220/7
TO220/7, E3230
Parameter
Active overvoltage prodection
Short circuit current
Input current (DC)
Pin1 (C
t
) and pin19 (V
C
)
Operating temperature range
Storage temperature range
Power dissipation
Symbol
Values
>40
self-limited
2
2
-40...+150
-50...+150
75
≤
1.67
≤
75
Unit
V
-
mA
mA
E
C
V
bb (AZ)
I
SC
I
Ct
I
VC
T
j
T
stg
P
tot
R
th JC
R
th JA
T
a
=25°C
chip-ambient
W
K/W
Thermal resistance chip-case
1)
2)
With 150Ω resistor in signal GND connection.
Potential between signal GND and load GND >0.5V
Semiconductor Group
1
12.96
BTS 630
Electrical Characteristics
at
T
j
= 25
E
C, unless otherwise specified.C
Bootstrap
= 22nF
Parameter
On-state resistance
I
L
=3A,
V
bb
=12V
Operating voltage
T
j
= -40 ...+150
E
C
Nominal current, calculated value
ISO-standard:V
bb
-V
OUT
≤
0.5V, Tc=85°C
Load current limit
V
bb
-V
OUT
> 1V
Undervoltage shutdown
I
L
= 3A
Overvoltage shutdown
I
L
= 3A
Max.output voltage (RMS)
I
L
= 3A,
V
bb
> 12 V
Reference voltage
I
REF
= 10mA
Reference current
pin 18 (GND) to pin 20 (V
REF
) short
Internal current consumption during
operation, measured in PWM gap
Bootstrap voltage, pin 2 (C
B1
) to pin 3 (C
B2
)
V
bb
= 12 V,
PWM frequency
T
c
= -40 ... +150 °C,
C
t
= 68 nF
Max. pulse duty factor
I
L
= 3A,
V
C
=0V , (50%
V
OUT
)
Min. pulse duty factor
I
L
= 3A,
V
C
=0V , (50%
V
OUT
)
Slew rate "on"
10 ... 90%
I
OUT
Slew rate "off"
90 ... 10%
I
OUT
Thermal overload trip temperature
1)
Note:
undervoltage shutdown
2)
Note:
overvoltage shutdown
Symbol
R
ON
V
bb
I
L
-ISO
I
LLim
V
bb(LOW)
V
bb(HI)
V
RMSmax
V
REF
I
REF
I
R
V
B
f
PWM
D
imax
D
imin
du/dt
(on)
du/dt
(off)
T
j
min.
-
5.9
5.8
-
3
17
12
2
-
-
-
50
95
-
20
20
150
1)
Values
typ.
max.
-
70
16.9
-
20
4.2
18
-
5.4
19
14
3
150
5
10
-
98
8
-
-
-
14
120
120
-
-
100
-
-
-
-
2)
Unit
m
Ω
V
A
A
V
V
V
V
mA
mA
V
Hz
%
%
mV/µs
mV/µs
°C
Semiconductor Group
3
DSP and ARM Processors
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