|
BUK456-200B |
BUK456-200A |
| Description |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| Is it Rohs certified? |
incompatible |
incompatible |
| Maker |
Philips Semiconductors (NXP Semiconductors N.V.) |
Philips Semiconductors (NXP Semiconductors N.V.) |
| Reach Compliance Code |
unknown |
unknown |
| Is Samacsys |
N |
N |
| Configuration |
Single |
Single |
| Maximum drain current (Abs) (ID) |
17 A |
19 A |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code |
e0 |
e0 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
150 W |
150 W |
| surface mount |
NO |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| Base Number Matches |
1 |
1 |