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PHP45NQ15T

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size77KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

PHP45NQ15T Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

PHP45NQ15T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)45.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
PHP/PHB45NQ15T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s
Low on-state resistance
s
Low thermal resistance
s
Fast switching
s
Low gate charge.
1.3 Applications
s
DC-to-DC primary side switching
s
AC-to-DC secondary side
rectification.
1.4 Quick reference data
s
V
DS
150 V
s
R
DSon
42 mΩ
s
I
D
45.1 A
s
Q
gd
= 10.3 nC (typ).
2. Pinning information
Table 1:
1
2
3
mb
gate
drain
source
mounting base;
connected to drain
[1]
Discrete pinning
Simplified outline
mb
mb
Pin Description
Symbol
D
G
mbb076
S
2
1
1 2 3
3
SOT78 (TO-220AB)
[1]
It is not possible to make a connection to pin 2 of the SOT404 package.
SOT404 (D
2
-PAK)
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