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RGP20M

Description
2 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size97KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet Parametric Compare View All

RGP20M Overview

2 A, SILICON, RECTIFIER DIODE

RGP20M Parametric

Parameter NameAttribute value
MakerJinan Jing Heng Electronics
Reach Compliance Codeunknow
S E M I C O N D U C T O R
G
RC
P
RGP20A THRU RGP20M
FAST RECOVERY RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:2.0Amperes
FAST RECOVERY
RECTIFIER
1.0(25.4)
MIN
0.144(3.6)
0.104(2.6)
DIA
0.300(7.60)
0.230(5.60)
1.0(25.4)
MIN
0.036(0.90)
0.028(0.70)
DIA
FEATURES
GPRC( Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
Fast switching
Low leakage, Low forward voltage drop
High current capability,High current surge
High reliability
DO-15
MECHANICAL DATA
Case:
JEDEC DO-15 molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750,Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.014ounce, 0.39 gram
JF
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25 C ambient temperature unless otherwise specified.Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
RGP
20A
50
35
50
RGP
20B
100
70
100
RGP
20D
200
140
200
RGP
20G
400
280
400
2.0
65.0
1.3
5.0
RGP
20J
600
420
600
RGP
20K
800
560
800
RGP
20M
1000
700
1000
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead length at T
A
=75 C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 2.0 A
Maximum DC Reverse Current at rated DC
blocking voltage
Maximum full load reverse current full cycle
average. 0.375"(9.5mm)lead length at
T
L
=55 C
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
V
olts
V
olts
V
olts
A
mp
A
mps
V
olts
A
100
T
rr
C
J
T
J
T
STG
150
35
-65 to+150
250
500
ns
P
F
C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
9-26
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657 FAX:86-531-6947096
WWW.JIFUSEMICON.COM

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RGP20M RGP20B RGP20G RGP20J RGP20A RGP20K RGP20D
Description 2 A, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE, DO-201AA 2 A, 400 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE, DO-201AE 2 A, 200 V, SILICON, RECTIFIER DIODE
Maker Jinan Jing Heng Electronics Jinan Jing Heng Electronics Jinan Jing Heng Electronics Jinan Jing Heng Electronics Jinan Jing Heng Electronics Jinan Jing Heng Electronics Jinan Jing Heng Electronics
Reach Compliance Code unknow unknow unknow unknown unknown unknow unknow
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