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CY7C1021D

Description
1-Mbit (64 K × 16) Static RAM CMOS for Optimum Speed and Power
File Size401KB,16 Pages
ManufacturerCypress Semiconductor
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CY7C1021D Overview

1-Mbit (64 K × 16) Static RAM CMOS for Optimum Speed and Power

CY7C1021D
1-Mbit (64 K × 16) Static RAM
1-Mbit (64 K × 16) Static RAM
Features
Functional Description
The CY7C1021D is a high performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an
automatic power down feature that significantly reduces power
consumption when deselected. The input and output pins (IO
0
through IO
15
) are placed in a high impedance state when the
device is deselected (CE HIGH), outputs are disabled (OE
HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during
a write operation (CE LOW and WE LOW).
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (IO
0
through IO
7
), is written into the location
specified on the address pins (A
0
through A
15
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (IO
8
through IO
15
)
is written into the location specified on the address pins (A
0
through A
15
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on IO
0
to IO
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
8
to IO
15
. See the
Truth Table on page 10
for a
complete description of read and write modes.
Temperature Ranges:
Industrial: –40 °C to 85 °C
Pin and Function Compatible with CY7C1021B
High Speed
t
AA
= 10 ns
Low Active Power
I
CC
= 80 mA at 10 ns
Low CMOS Standby Power
I
SB2
= 3 mA
2.0 V Data Retention
Automatic Power Down when Deselected
CMOS for Optimum Speed and Power
Independent Control of Upper and Lower Bits
Available in Pb-free 44-pin 400-Mil Wide Molded SOJ and
44-pin TSOP II Packages
Logic Block Diagram
DATA IN DRIVERS
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
64K x 16
RAM Array
SENSE AMPS
IO
0
–IO
7
IO
8
–IO
15
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
Cypress Semiconductor Corporation
Document #: 38-05462 Rev. *J
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 7, 2011
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