CY7C1512KV18-250BZXC datasheet, PDF

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CY7C1512KV18-250BZXC: Description72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses; File Size598KB，33 Pages; ManufacturerCypress Semiconductor

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CY7C1512KV18-250BZXC Overview

72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses

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72-Mbit QDR II SRAM 2-Word

Burst Architecture

Features

■

CY7C1510KV18, CY7C1525KV18

CY7C1512KV18, CY7C1514KV18

Configurations

CY7C1510KV18 – 8M x 8

CY7C1525KV18 – 8M x 9

CY7C1512KV18 – 4M x 18

CY7C1514KV18 – 2M x 36

Separate independent read and write data ports

❐

Supports concurrent transactions

350 MHz clock for high bandwidth

Two-word burst on all accesses

Double data rate (DDR) interfaces on both read and write ports

(data transferred at 700 MHz) at 350 MHz

Two input clocks (K and K) for precise DDR timing

❐

SRAM uses rising edges only

Two input clocks for output data (C and C) to minimize clock

skew and flight time mismatches

Echo clocks (CQ and CQ) simplify data capture in high speed

systems

Single multiplexed address input bus latches address inputs

for both read and write ports

Separate port selects for depth expansion

Synchronous internally self-timed writes

QDR

II operates with 1.5 cycle read latency when DOFF is

asserted HIGH

Operates similar to QDR I device with 1 cycle read latency when

DOFF is asserted LOW

Available in x8, x9, x18, and x36 configurations

Full data coherency, providing most current data

Core V

= 1.8 V (±0.1 V); I/O V

DDQ

= 1.4V to V

❐

Supports both 1.5 V and 1.8 V I/O supply

Available in 165-ball fine pitch ball grid array (FBGA) package

(13 x 15 x 1.4 mm)

Offered in both Pb-free and non Pb-free packages

Variable drive HSTL output buffers

JTAG 1149.1 compatible test access port

Phase Locked Loop (PLL) for Accurate Data Placement

■

Functional Description

The CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and

CY7C1514KV18 are 1.8 V synchronous pipelined SRAMs,

equipped with QDR II architecture. QDR II architecture consists

of two separate ports: the read port and the write port to access

the memory array. The read port has dedicated data outputs to

support read operations and the write port has dedicated data

inputs to support write operations. QDR II architecture has

separate data inputs and data outputs to completely eliminate

the need to “turnaround” the data bus that exists with common

I/O devices. Access to each port is through a common address

bus. Addresses for read and write addresses are latched on

alternate rising edges of the input (K) clock. Accesses to the

QDR II read and write ports are completely independent of one

another. To maximize data throughput, both read and write ports

are equipped with DDR interfaces. Each address location is

associated with two 8-bit words (CY7C1510KV18), 9-bit words

(CY7C1525KV18), 18-bit words (CY7C1512KV18), or 36-bit

words (CY7C1514KV18) that burst sequentially into or out of the

device. Because data can be transferred into and out of the

device on every rising edge of both input clocks (K and K and C

and C), memory bandwidth is maximized while simplifying

system design by eliminating bus turnarounds.

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

■

Table 1. Selection Guide

Description

Maximum operating frequency

Maximum operating current

x18

x36

350 MHz

350

825

840

1030

333 MHz

333

790

810

990

300 MHz

300

730

750

910

250 MHz

250

640

650

790

200 MHz

200

540

550

660

167 MHz

167

480

490

580

Unit

MHz

Cypress Semiconductor Corporation

Document Number: 001-00436 Rev. *M

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised April 10, 2011

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