DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D130
1N4728A to 1N4749A
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1000 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.3 to 24 V.
APPLICATIONS
•
Low voltage stabilizers.
The diodes are type branded.
handbook, halfpage
1N4728A to 1N4749A
DESCRIPTION
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
k
a
MAM241
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZM
I
ZSM
P
tot
T
stg
T
j
PARAMETER
continuous forward current
working current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
T
amb
= 50
°C
CONDITIONS
MIN.
−
MAX.
500
UNIT
mA
see Table
“Per type”
see Table
“Per type”
−
−65
−65
1000
+200
+200
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 200 mA; see Fig.3
MIN.
−
MAX.
1.2
V
UNIT
1996 Apr 26
2
1996 Apr 26
3
Philips Semiconductors
Per type
T
j
= 25
°C;
unless otherwise specified.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
NOM.
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
Notes
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
2. Half square wave or equivalent sinewave pulse
1
⁄
120
second duration superimposed on I
Ztest
.
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
TEST CURRENT
I
Ztest
(mA)
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
MAX.
10
10
9
9
8
7
5
2
3.5
4
4.5
5
7
8
9
10
14
16
20
22
23
25
r
dif
(Ω)
at I
Z
MAX.
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
Z
(mA)
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
WORKING
CURRENT
I
ZM
(mA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(mA)
(2)
MAX.
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
Voltage regulator diodes
TYPE No.
V
R
(V)
MAX.
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
1N4728A to 1N4749A
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
PARAMETER
thermal resistance from junction to tie-point
CONDITIONS
1N4728A to 1N4749A
VALUE
110
UNIT
K/W
lead length 4 mm; see Fig.2
1996 Apr 26
4
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
1N4728A to 1N4749A
handbook, full pagewidth
10
3
MBG928
Rth j-tp
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
2
10
0.02
0.01
0
1
10
−1
tp
T
δ
=
tp
T
1
10
10
2
10
3
10
4
tp (ms)
10
5
Fig.2 Thermal resistance from junction to tie-point; lead length 4 mm.
handbook, halfpage
300
MBG925
IF
(mA)
200
(1)
(2)
100
0
0
0.5
VF (V)
1.0
(1) T
j
= 200
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
Fig.3
Forward current as a function of
forward voltage.
1996 Apr 26
5
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