LMUN2113LT3G datasheet, PDF - EEWORLD Datasheet

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LMUN2113LT3G: DescriptionBias Resistor Transistors; CategoryDiscrete semiconductor The transistor; File Size401KB，10 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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LMUN2113LT3G Overview

Bias Resistor Transistors

LMUN2113LT3G Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	1
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

LMUN2111LT1G

SERIES

SOT-23

•

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SOT-23 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

•

Available in 8 mm embossed tape and reel. Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

•

We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

CBO

CEO

Value

100

Unit

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature Range

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

Symbol

Max

246 (Note 1.)

400 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

508 (Note 1.)

311 (Note 2.)

174 (Note 1.)

208 (Note 2.)

–55 to +150

Unit

°C/W

°C

θJA

θJL

, T

stg

1/8

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