LESHAN RADIO COMPANY, LTD.
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT–23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
LMBZ6V8ALT1G
Series
3
1
2
SOT–23
1.CATHODE
3.ANODE
2.CATHODE
•
SOT–23 Package Allows Either Two Separate Unidirectional
•
•
•
•
•
•
•
•
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range – 3 V to 26 V
Standard Zener Breakdown Voltage Range – 5.6 V to 33 V
Peak Power – 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5. Waveform
ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0
µA
Flammability Rating UL 94V–O
We declare that the material of product
compliance with RoHS requirements.
Specification Features:
MARKING
DIAGRAM
xxx
xxx
M
= Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
3000/10000Tape & Reel
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
LMBZ5V6ALT1G/T3G SOT–23
LMBZ6V2ALT1G/T3G
LMBZ6V8ALT1G/T3G
SOT–23
SOT–23
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
LMBZ9V1ALT1G/T3G SOT–23
LMBZ10VALT1G/T3G
LMBZ12VALT1G/T3G
LMBZ15VALT1G/T3G
LMBZ18VALT1G/T3G
LMBZ20VALT1G/T3G
LMBZ27VALT1G/T3G
LMBZ33VALT1G/T3G
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
LMBZ6V8ALT1G–1/7
M
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1.) LMBZ5V6ALT1G thru LMBZ10VALT1G
@ T
L
≤
25°C
LMBZ12VALT1G thru LMBZ33VALT1G
Total Power Dissipation on FR–5 Board (Note 2.) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Power Dissipation on Alumina Substrate (Note 3.) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
1. Non–repetitive current pulse per Figure 5. and derate above T
A
= 25°C per Figure 6.
2. FR–5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
Symbol
P
pk
°P
D
°
R
θJA
°P
D
°
R
θJA
T
J
, T
stg
T
L
Value
24
40
225
1.8
556
300
2.4
417
– 55 to +150
260
Unit
Watts
°mW°
mW/°C
°C/W
°mW
mW/°C
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
I
I
F
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Z
ZT
I
ZK
Z
ZK
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
PP
Uni–Directional TVS
LMBZ6V8ALT1G–2/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
24 WATTS
(V
F
= 0.9 V Max @ I
F
= 10 mA)
I
R
@
V
RWM
mA
5.0
0.5
Breakdown Voltage
V
BR
(Note 4.)
(V)
Min
5.32
5.89
Nom
5.6
6.2
Max
5.88
6.51
@ I
T
mA
20
1.0
Max Zener
Impedance
(Note 5.)
Z
ZT
@ I
ZT
Ω
11
–
Z
ZK
@ I
ZK
Ω
1600
–
mA
0.25
–
V
C
@ I
PP
(Note 6.)
V
C
V
8.0
8.7
I
PP
A
3.0
2.76
QV
BR
mV/5C
1.26
2.80
Device
LMBZ5V6ALT1G
LMBZ6V2ALT1G
Device
Marking
5A6
6A2
V
RWM
Volts
3.0
3.0
(V
F
= 1.1 V Max @ I
F
= 200 mA)
Breakdown Voltage
Device
Marking
6A8
9A1
10A
V
RWM
Volts
4.5
6.0
6.5
I
R
@ V
RWM
mA
0.5
0.3
0.3
V
BR
(Note 4.)
(V)
Min
6.46
8.65
9.50
Nom
6.8
9.1
10
Max
7.14
9.56
10.5
@ I
T
mA
1.0
1.0
1.0
V
C
@ I
PP
(Note 6.)
V
C
V
9.6
14
14.2
I
PP
A
2.5
1.7
1.7
QV
BR
mV/5C
3.4
7.5
7.5
Device
LMBZ6V8ALT1G
LMBZ9V1ALT1G
LMBZ10VALT1G
(V
F
= 1.1 V Max @ I
F
= 200 mA)
V
RWM
Volts
8.5
12
14.5
17
22
26
I
R
@ V
RWM
nA
200
50
50
50
50
50
40 WATTS
Breakdown Voltage
V
C
@ I
PP
(Note 6.)
@ I
T
mA
1.0
1.0
1.0
1.0
1.0
1.0
V
C
V
17
21
25
28
40
46
I
PP
A
2.35
1.9
1.6
1.4
1.0
0.87
QV
BR
mV/5C
7.5
12.3
15.3
17.2
24.3
30.4
V
BR
(Note 4.)
(V)
Min
11.40
14.25
17.10
19.00
25.65
31.35
Nom
12
15
18
20
27
33
Max
12.60
15.75
18.90
21.00
28.35
34.65
Device
LMBZ12VALT1G
LMBZ15VALT1G
LMBZ18VALT1G
LMBZ20VALT1G
LMBZ27VALT1G
LMBZ33VALT1G
Device
Marking
12A
15A
18A
20A
27A
33A
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
5. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
Z(DC)
, with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5. and derate per Figure 6.
LMBZ6V8ALT1G–3/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
TYPICAL CHARACTERISTICS
18
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ I T )
15
12
9
6
3
0
-40
IR (nA)
0
+50
TEMPERATURE (°C)
+100
+150
1000
100
10
1
0.1
0.01
-40
+25
+85
TEMPERATURE (°C)
+125
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
280
PD , POWER DISSIPATION (mW)
C, CAPACITANCE (pF)
240
200
160
120
80
40
0
0
1
BIAS (V)
2
3
5.6 V
300
250
200
150
100
50
0
Figure 2. Typical Leakage Current
versus Temperature
ALUMINA SUBSTRATE
15 V
FR-5 BOARD
0
25
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
Figure 4. Steady State Power Derating Curve
LMBZ6V8ALT1G–4/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
TYPICAL CHARACTERISTICS
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25
°
C
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
175
200
t
r
≤
10
ms
100
VALUE (%)
PEAK VALUE - I
PP
I
PP
HALF VALUE -
2
50
t
P
0
0
1
2
3
t, TIME (ms)
4
Figure 5. Pulse Waveform
LMBZ5V6ALT1
100
Ppk PEAK SURGE POWER (W)
Ppk PEAK SURGE POWER (W)
RECTANGULAR
WAVEFORM, T
A
= 25°C
BIDIRECTIONAL
10
100
Figure 6. Pulse Derating Curve
LMBZ5V6ALT1
RECTANGULAR
WAVEFORM, T
A
= 25°C
BIDIRECTIONAL
UNIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1
10
PW, PULSE WIDTH (ms)
100
1000
0.1
UNIDIRECTIONAL
1
1
10
PW, PULSE WIDTH (ms)
100
1000
Figure 7. Maximum Non–repetitive Surge
Power, P
pk
versus PW
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at I
Z
(pk).
Figure 8. Maximum Non–repetitive Surge
Power, P
pk
(NOM) versus PW
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
LMBZ6V8ALT1G –5/7
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