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1N4778

Description
Zener Diode, 8.5V V(Z), 5%, 0.5W, Silicon, DO-35,
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerCompensated Devices Inc.
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1N4778 Overview

Zener Diode, 8.5V V(Z), 5%, 0.5W, Silicon, DO-35,

1N4778 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage8.5 V
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Voltage temperatureCoeff-Max0.085 mV/°C
Maximum voltage tolerance5%
Base Number Matches1
• 8.5 VOLT NOMINAL ZENER VOLTAGE + 5%
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• LOW CURRENT RANGE: 0.5 AND 1.0 mA
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
1N4775
thru
1N4784A
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
l
R
= 10
µ
A @ 25°C & V
R
= 6 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
vz @ I
ZT
(Note 3)
VOLTS
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
DYNAMIC
IMPEDANCE
ZZT
(Note 1)
VOLTAGE
TEMPERATURE
TEMPERATURE
RANGE
STABILITY
∆V
ZT
(Note 2)
mV
64
132
32
66
13
26
6.4
13
3.2
6.6
64
132
32
66
13
26
6.4
13
3.2
6.6
°C
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
EFFECTIVE
TEMPERATURE
COEFFICIENT
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
100
100
100
100
100
100
% / °C
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
1N4775
1N4775A
1N4776
1N4776A
1N4777
1N4777A
1N4778
1N4778A
1N4779
1N4779A
1N4780
1N4780A
1N4781
1N4781A
1N4782
1N4782A
1N4783
1N4783A
1N4784
1N4784A
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
ANY.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms
a.c. current equal to 10% of lZT.
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specified mV at any discrete temperature
between the established limits, per JEDEC standard No.5.
Zener voltage range equals 8.5 volts + 5%.
NOTE 2
NOTE 3
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
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