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IDT70V659S

Description
128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
Categorystorage   
File Size196KB,23 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
Download Datasheet Parametric Compare View All

IDT70V659S Overview

128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256

IDT70V659S Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals256
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.45 V
Minimum supply/operating voltage3.15 V
Rated supply voltage3.3 V
maximum access time12 ns
Processing package description17 × 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
stateACTIVE
CraftsmanshipCMOS
packaging shapeSQUARE
Package SizeGRID array, low PROFILE
surface mountYes
Terminal formBALL
Terminal spacing1 mm
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width36
organize128K × 36
storage density4.72E6 deg
operating modeASYNCHRONOUS
Number of digits131072 words
Number of digits128K
Memory IC typedual-port static random access memory
serial parallelparallel
HIGH-SPEED 3.3V 128K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
Features
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V659 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
x
x
x
PRELIMINARY
IDT70V659S
x
x
x
x
x
x
x
x
x
x
x
x
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 208-pin Plastic Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
BE
3L
BE
2L
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
R
B
E
0
L
B
E
1
L
B
E
2
L
B
E
3
L
B
E
3
R
B
E
2
R
B
E
1
R
B
E
0
R
BE
1 L
BE
0L
R/
W
L
CE
0 L
CE1L
CE
0 R
CE1R
OE
L
OE
R
Dout0-8_L
Dout9-17_L
Dout18-26_L
Dout27-35_L
Dout0-8_R
Dout9-17_R
Dout18-26_R
Dout27-35_R
128K x 36
MEMORY
ARRAY
I/O - I/O
0L
35L
Di n_L
Di n_R
I/O - I/O
0R
35R
A16 L
A0 L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
16R
A
0R
CE
0 L
CE1L
OE
L
R/WL
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
0 R
CE1R
OE
R
R/WR
BUSY
R
BUSY
L
SEM
L
INT
L
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
4869 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
JUNE 2001
DSC-4869/3
1
©2001 Integrated Device Technology, Inc.

IDT70V659S Related Products

IDT70V659S IDT70V659
Description 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
Number of functions 1 1
Number of terminals 256 256
Maximum operating temperature 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel
Maximum supply/operating voltage 3.45 V 3.45 V
Minimum supply/operating voltage 3.15 V 3.15 V
Rated supply voltage 3.3 V 3.3 V
maximum access time 12 ns 12 ns
Processing package description 17 × 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 17 × 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
state ACTIVE ACTIVE
Craftsmanship CMOS CMOS
packaging shape SQUARE SQUARE
Package Size GRID array, low PROFILE GRID array, low PROFILE
surface mount Yes Yes
Terminal form BALL BALL
Terminal spacing 1 mm 1 mm
terminal coating tin lead tin lead
Terminal location BOTTOM BOTTOM
Packaging Materials Plastic/Epoxy Plastic/Epoxy
Temperature level INDUSTRIAL INDUSTRIAL
memory width 36 36
organize 128K × 36 128K × 36
storage density 4.72E6 deg 4.72E6 deg
operating mode ASYNCHRONOUS ASYNCHRONOUS
Memory IC type dual-port static random access memory dual-port static random access memory
serial parallel parallel parallel
Number of digits 128K 128K
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