1N4789CO datasheet, PDF - EEWORLD Datasheet

1N4789CO: DescriptionVariable Capacitance Diode, 12pF C(T), 28V, Silicon, DIE-1; CategoryDiscrete semiconductor diode; File Size51KB，1 Pages; ManufacturerCobham PLC

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1N4789CO Overview

Variable Capacitance Diode, 12pF C(T), 28V, Silicon, DIE-1

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DIE
package instruction	X-XUUC-N
Contacts	1
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	28 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Minimum diode capacitance ratio	2.1882
Nominal diode capacitance	12 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	X-XUUC-N
JESD-609 code	e0
Number of components	1
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
minimum quality factor	15
Maximum reverse current	0.005 µA
Reverse test voltage	25 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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