1N4678...1N4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
Zener voltage specified at 50
m
A
Maximum delta V
Z
given from 10
m
A to 100
m
A
Very high stability
Low noise
Applications
94 9367
Voltage stabilization
Order Instruction
Type
1N4678
Ordering Code
1N4678–TAP
1N4678–TR
Remarks
Ammopack
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4 mm, T
L
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=100mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85586
Rev. A3, 09-Mar-01
www.vishay.com
1 (6)
1N4678...1N4717
Vishay Telefunken
Type
1)
Zener Voltage V
Z
@ I
Z
= 50
m
A
Typ.
1)
V
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Min.
V
1.710
1.900
2.090
2.280
2.565
2.850
3.135
3.420
3.705
4.085
4.465
4.845
5.320
5.890
6.460
7.125
7.790
8.265
8.645
9.500
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
Max.
V
1.890
2.100
2.310
2.520
2.835
3.150
3.465
3.780
4.095
4.515
4.935
5.355
5.880
6.510
7.140
7.875
8.610
9.135
9.555
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
Max. Reverse
Test
Current
Voltage
3)
I
R
V
R 3)
m
A
V
7.5
1.0
5.0
1.0
4.0
1.0
2.0
1.0
1.0
1.0
0.8
1.0
7.5
1.5
7.5
2.0
5.0
2.0
4.0
2.0
10
3.0
10
3.0
10
4.0
10
5.0
10
5.1
10
5.7
1.0
6.2
1.0
6.6
1.0
6.9
1.0
7.6
0,05
8.4
0.05
9.1
0.05
9.8
0.05
10.6
0.05
11.4
0.05
12.1
0.05
12.9
0.05
13.6
0.05
14.4
0.01
15.2
0.01
16.7
0.01
18.2
0.01
19.0
0.01
20.4
0.01
21.2
0.01
22.8
0.01
25.0
0.01
27.3
0.01
29.6
0.01
32.6
Max. Zener
Current
I
ZM 2)
mA
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
Max. Voltage
Change
D
V
Z 4)
V
0.70
0.70
0.75
0.80
0.85
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.50
0.10
0.08
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.22
0.24
0.25
0.27
0.28
0.30
0.33
0.36
0.39
0.43
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
1.) Toleranzing and voltage designation (V
Z
).
The type numbers shown have a standard
tolerance of
±
5% on the nominal zener voltage.
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2 (6)
2.) Maximum zener current ratings (I
ZM
). Maximum
zener current ratings are based on maximum
zener voltage of the individual units.
Document Number 85586
Rev. A3, 09-Mar-01
1N4678...1N4717
Vishay Telefunken
3.) Reverse leakage current (I
R
). Reverse leakage
currents are guaranteed and measured at V
R
as
shown on the table.
4.) Maximum voltage change (
D
V
Z
). Voltage change
is equal to the difference between V
Z
at 100
m
A and
V
Z
at 10
m
A.
Characteristics
(T
j
= 25
_
C unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
40
80
120
160
200
95 9599
0
60
120
180
240
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
– Voltage Change ( mV )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
T
j
= 25°C
100
10
5
I
Z
=5mA
0
I
Z
=5mA
10
D
V
Z
1
0
95 9598
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9600
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25
°
C
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
Document Number 85586
Rev. A3, 09-Mar-01
www.vishay.com
3 (6)
1N4678...1N4717
Vishay Telefunken
200
C
D
– Diode Capacitance ( pF )
50
P
tot
=500mW
T
amb
=25°C
V
R
= 2V
100
T
j
= 25°C
I
Z
– Z-Current ( mA )
25
95 9607
150
40
30
20
10
50
0
0
95 9601
0
5
10
15
20
15
20
25
30
35
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z–Voltage
100
I
F
– Forward Current ( mA )
Figure 8. Z–Current vs. Z–Voltage
1000
r
Z
– Differential Z-Resistance (
10
T
j
= 25°C
1
W
)
I
Z
=1mA
100
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
5mA
10 10mA
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 6. Forward Current vs. Forward Voltage
Figure 9. Differential Z–Resistance vs. Z–Voltage
100
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
40
20
0
0
4
8
12
16
20
95 9604
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
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4 (6)
Document Number 85586
Rev. A3, 09-Mar-01
1N4678...1N4717
Vishay Telefunken
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
D
T=T
jmax
–T
amb
R
thJA
=300K/W
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10. Thermal Response
Dimensions in mm
Cathode Identification
∅
0.55 max.
technical drawings
according to DIN
specifications
94 9366
∅
1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
26 min.
3.9 max.
26 min.
Document Number 85586
Rev. A3, 09-Mar-01
www.vishay.com
5 (6)
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