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1N5811XD-T39L

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 150V V(RRM), Silicon, TO-39
CategoryDiscrete semiconductor    diode   
File Size14KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

1N5811XD-T39L Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 150V V(RRM), Silicon, TO-39

1N5811XD-T39L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current6 A
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
Maximum reverse recovery time0.03 µs
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5811XD-T39L
MECHANICAL DATA
Dimensions in mm
8.89 (0.35)
9.40 (0.37)
7.75 (0. 305)
8.51 (0. 335)
5.08 (0. 200)
typ.
DUAL COMMON CATHODE
SCHOTTKY BARRIER
RECTIFIER IN A
LOW PROFILE
HERMETIC TO39 PACKAGE
2. 54
(0.100)
4.19 (0. 165)
4.95 (0. 195)
2
1
3
0.66 (0. 026)
1.14 (0. 045)
0.71 (0. 028)
0.86 (0. 034)
FEATURES
• Hermetic Low Profile TO39
• V
RRM
= 150V
• I
AV
= 6A
• Low Forward Voltage
• Fast Reverse Recovery Time
• Screening Options Available
!

12.70
(0.500)
min.
0. 89 m a x .
(0. 035)
7.75 (0. 305)
8.51 (0. 335)
dia.
45 ˚
TO39 PACKAGE
1 = Anode1
2 = Anode 2
3 = Cathode 1, Cathode 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
RRM
V
RMS
V
dc
V
pk
I
AV
I
FSM
T
stg
T
j
R
q
JC
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Reverse Breakdown Voltage
Maximum Average DC Output Current (75°C)
Non Repetitive Forward Surge Current (8.3ms)
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance (Junction-Case)
150V
105V
150V
160V
6A
125A
– 55 to +175°C
– 65 to +150°C
TBA
ELECTRICAL CHARACTERISTICS
Parameter
V
F
I
R
t
rr
tf
Cj
Forward Voltage
Reverse Current
Maximum Reverse Recovery Time
Forward Recovery Time
Typical Junction Capacitance
I
F
= 4A
Test Conditions
T = 25°C
T = 25°C
T = 100°C
I
R
= 1A
V
R
= 150V
V
R
= 150V
I
F
= 1A
Irr = 0.1A
I
F
= 1A recovery to 1V
Min.
Typ.
Max.
1.0
5
150
30
Unit
V
m
A
ns
ns
pF
Prelim. 2/99
15
45
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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