1N4003QCSM datasheet, PDF - EEWORLD Datasheet

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1N4003QCSM: Description1A, 200V, 4 ELEMENT, SILICON, SIGNAL DIODE, HERMETIC SEALED, CERAMIC, LCC2-6; CategoryDiscrete semiconductor diode; File Size20KB，3 Pages; ManufacturerSEMELAB

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1N4003QCSM Overview

1A, 200V, 4 ELEMENT, SILICON, SIGNAL DIODE, HERMETIC SEALED, CERAMIC, LCC2-6

1N4003QCSM Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	R-CDSO-N6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-CDSO-N6
Number of components	4
Number of terminals	6
Maximum operating temperature	150 °C
Maximum output current	1 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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MECHANICAL DATA

Dimensions in mm (inches)

5.59 ± 0.13

(0.22 ± 0.005)

0.25 ± 0.03

(0.01 ± 0.001)

1.40 ± 0.15

(0.055 ± 0.006)

0.64 ± 0.08

(0.025 ± 0.003)

0.23 rad.

(0.009)

3

2

1.27 ± 0.05

(0.05 ± 0.002)

3.81 ± 0.13

(0.15 ± 0.005)

SEME

1N4003CSM4

GENERAL PURPOSE

SILICON RECTIFIER DIODE

4

1

0.23 min.

(0.009)

General Purpose Rectifier Diode

In Hermetic Ceramic Surface Mount Package

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

For High Reliability Applications

(LCC3 PACKAGE)

Underside View

PAD 1 — Cathode

PAD 2 — No Connection

PAD 3 — No Connection

PAD 4 — Anode

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

Parameter

V

R

V

RRM

I

F(AV)

I

F

I

FRM

I

FSM

T

stg

Tj

Reverse Voltage

Peak Reverse Voltage

Average Half Wave Rectified

Forward Current

D.C Forward Current

Repetitive Peak Forward Current

Non-Repetitive Peak Forward Current (half cycle surge , 60 c.p.s)

Storage Temperature Range

Max junction temperature

-55 to +175 °C

+150°C

T

amb

£

25 °C

T

amb

=

100 °C

Test Conditions

Min.

Typ.

Max.

200

1.0

0.75

1

10

30

Unit

V

A

CHARACTERISTICS

(T

case

= 25°C unless otherwise stated)

Parameter

V

F

Forward Voltage Drop

voltage drop

I

R

I

R(AV)

Reverse Current

Full cycle average reverse current

V

F(AV)

Full-Cycle average forward

Test Conditions

I

F

= 1A

I

F(AV)

= 1A

V

R

= 50 V , T

amb

= 25 °C

V

R

= 50 V , T

amb

= 100 °C

V

RRM

= 50 V , T

amb

= 75 °C

Min.

Typ.

Max.

1.1

0.8

10

50

30

Unit

V

m

A

m

A

Prelim. 6/00

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

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