HANBit
HMF8M8F4VS
FLASH-ROM MODULE 8MByte (8M x 8-Bit) , SMM 80Pin
Part No. HMF8M8F4VS
GENERAL DESCRIPTION
The HMF8M8F4VS is a high-speed flash read only memory (FROM) module containing 8,388,608 bytes organized in an x8bit
configuration. The module consists of four 2M x 8 FROM mounted on a 80-pin, SMM connector FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTL-
compatible.
PIN ASSIGNMENT
FEATURES
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Part identification
HMF8M8F4VS(Bottom boot block configuration)
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Access time: 90, 100, 120ns
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High-density 8MByte design
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High-reliability, low-power design
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Single + 3V to 3.6V power supply
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80-Pin Designed
40-Pin, 0.8mm Fine Pitch Connector P1,P2
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Minimum 100,000 write cycle guarantee
per sector
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10-year data retention at 85 oC
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Flexible sector architecture
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Embedded algorithms
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Erase suspend / Erase resume
PIN
1
2
3
4
5
6
7
8
9
10
11
OPTIONS
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Timing
90ns access
100ns access
120ns access
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Packages
SMM 80-pin
F
- 90
-100
-120
MARKING
12
13
14
15
16
17
18
19
20
A9
A10
Vss
A11
A12
A13
A14
A15
Vcc
32
33
34
35
36
37
38
39
40
DQ3
NC
Vss
DQ2
NC
DQ1
NC
DQ0
Vcc
12
13
14
15
16
17
18
19
20
NC
NC
Vss
NC
NC
NC
NC
NC
Vcc
32
33
34
35
36
37
38
39
40
A7
A6
Vss
A5
A4
A3
A2
A1
Vcc
Symbol
Vcc
A20
NC
NC
NC
/RY_BY
Vss
/RESET
/WE
A19
A8
P1
PIN
21
22
23
24
25
26
27
28
29
30
31
Symbol
Vcc
NC
DQ7
NC
DQ6
NC
Vss
DQ5
NC
DQ4
NC
PIN
1
2
3
4
5
6
7
8
9
10
11
Symbol
Vcc
/CE1
/CE2
/CE3
NC(/CE4)
NC(/CE5)
Vss
NC(/CE6)
NC(/CE7)
NC
NC
P2
PIN
21
22
23
24
25
26
27
28
29
30
31
Symbol
Vcc
NC
NC
NC
/OE
/CE0
Vss
A16
A0
A18
A17
URL:
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REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
A(0 : 20)
DQ(0 :7)
A(0:20) DQ(0:7)
/CE0
/CE
/OE
/WE
/Reset
/RY-BY
HMF8M8F4VS
U4
A(0:20) DQ(0:7)
/CE1
/CE
/OE
/WE
/Reset
/RY-BY
U3
A(0:20) DQ(0:7)
/CE2
/CE
/OE
/WE
/Reset
/RY-BY
U2
A(0:20) DQ(0:7)
/CE3
/OE
/WE
/RESET
/RY_BY
/CE
/OE
/WE
/Reset
/RY-BY
U1
PIN DESCRIPTION
PIN
A0
–
A20
DQ0
–
DQ31
/CE0-/CE3
/OE
/WE
/RESET
FUNCTION
Address Inputs
Data Input/Output
Chip Enable
Output Enable
Read/Write Enable
Hardware Reset Pin
PIN
/BYTE
Vcc
Vss
/RY_BY
NC
FUNCTION
Word / Byte selection
Power (+3V)
Ground
Ready/Busy output
No Connection
URL:
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REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
TRUTH TABLE
MODE
STANDBY
RESET
SECTOR PROTECT
SECTOR UNPROTECT
READ
WRITE
/CS
Vcc±0.3V
X
L
L
L
L
/OE
X
X
H
H
L
H
/WE
X
X
L
L
H
L
RESET
Vcc±0.3V
L
V
ID
V
ID
H
H
HMF8M8F4VS
DQ
HIGH-Z
HIGH-Z
D
IN,
D
OUT
D
IN,
D
OUT
D
OUT
D
OUT
Note
: X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Output Short Circuit Current
Storage Temperature
Operating Temperature
RATING
-0.5V to Vcc +0.5V
-0.5V to +4.0V
1,600mA
-65oC to +150oC
-0oC to +70oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Vcc for regulated Supply Voltage
Vcc for full voltage
RANGE
+2.0V to 3.6V
+2.7V to 3.6V
DC AND OPERATING CHARACTERISTICS
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Read Current
Vcc Active Write Current
Vcc Standby Current
Vcc Reset Current
TEST CONDITIONS
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
I
OH
= -2.0mA, Vcc = Vcc min
I
OL
= 4.0mA, Vcc = Vcc min
/CE = V
IL
, ,/OE=V
IL
, f=5MHz
/CE = V
IL
, /OE=V
IH
/CE, RESET=V
CC
±0.3V
/RESET=Vss±0.3V,
SYMBOL
I
L1
I
L0
V
OH
V
OL
I
CC1
I
CC2
I
CC3
I
CC4
MIN
-4.0
-4.0
0.85xVcc
0.4
64
180
20
20
MAX
+4.0
+4.0
UNITS
µA
µA
V
V
mA
mA
µA
µA
URL:
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REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
Low Vcc Lock-Out Voltage
V
LKO
1.5
HMF8M8F4VS
V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Block Erase Time
-
TYP.
0.7
MAX.
Excludes 00H programming
15
Sec
prior to erasure
Byte Programming Time
-
9
270
µS
Excludes system-level
overhead
Excludes system-level
Chip Programming Time
-
18
54
sec
overhead
UNIT
COMMENTS
CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
10
10
10
pF
pF
pF
MIN.
MAX
UNIT
Notes:
Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
CL=100pF
SYMBOLS
DESCRIPTION
-90
JEDEC
t
AVAV
t
ELQV
t
GLQV
t
EHQZ
t
AXQX
STANDARD
Min
t
RC
t
CE
t
OE
t
DF
t
QH
/CE or /OE, Whichever Occurs First
Read Cycle Time
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Hold Time From Addresses,
0
0
0
ns
90
90
35
30
Max
Min
100
100
40
30
Max
Min
120
120
50
30
Max
ns
ns
ns
ns
-100
-120
UNIT
URL:
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REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
TEST CONDITIONS
TEST CONDITION
Output load
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
5
0.0 - 3.0
1.5
1.5
VALUE
1TTL gate
HMF8M8F4VS
UNIT
ns
V
V
V
3.3V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
STANDARD
Min
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
GHWL
t
CS
t
CH
t
WP
t
WPH
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
90
0
45
45
0
0
0
0
0
45
30
Max
Min
100
0
45
45
0
0
0
0
0
45
30
Max
Min
120
0
50
50
0
0
0
0
0
50
30
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-90
C
L
=100pF
-100
-120
UNIT
URL:
www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
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