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HMC784MS8GE

Description
0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 2 dB INSERTION LOSS
CategoryWireless rf/communication    Radio frequency and microwave   
File Size246KB,8 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC784MS8GE Overview

0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 2 dB INSERTION LOSS

HMC784MS8GE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
package instructionTSSOP8,.19
Reach Compliance Codecompli
ECCN codeEAR99
1dB compression point35 dBm
Other featuresCMOS/TTL COMPATIBLE
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)39 dBm
Maximum insertion loss2 dB
Minimum isolation26 dB
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals8
on time0.04 µs
Maximum operating frequency4000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTSSOP8,.19
power supply5 V
RF/Microwave Device TypesDIVERSITY SWITCH
surface mountYES
technologyGAAS
Terminal surfaceMatte Tin (Sn)
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Typical Applications
The HMC784MS8GE is ideal for:
• Cellular / 4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
Features
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +62 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.4 dB
MSOP8G Package: 14.8 mm
2
Functional Diagram
General Description
The HMC784MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
11
SWITCHES - SPDT - SMT
Electrical Specifi cations,
T
A
= +25° C, Vctl = 0/Vdd, Vdd = +5V
(Unless Otherwise Stated)
, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
Vdd = +3V
Vdd = +5V
Vdd = +8V
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
0.1 - 4.0 GHz
32
35
38
26
Min.
Typ.
0.4
0.6
0.8
0.9
1.3
30
35
30
20
10
32
37
38
35
38
41
42
62
61
60
Max.
0.6
0.8
1.1
1.3
2.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Insertion Loss
Isolation
Return Loss (On State)
Input Power for 0.1dB Compression
Input Power for 1dB Compression
0.1 - 4.0 GHz
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
15
40
ns
ns
11 - 224
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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