DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158A
N-CHANNEL MOSFET
FOR HIGH-SPEED SWITCHING
The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can
be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in low-
voltage portable systems such as headphone stereo sets and camcorders.
FEATURES
• Capable of drive gate with 1.5 V
• Because of high input impedance, there is no need to consider
driving current.
• Bias resistance can be omitted, enabling reduction in total
number of parts.
PACKAGE DRAWING (Unit: mm)
ORDERING INFORMATION
PART NUMBER
2SK2158A-T1B-AT
2SK2158A-T2B-AT
PACKAGE
SC-59 (Mini Mold)
Marking: G23
Remark
“-AT” indicates Pb-free (This product does not contain
Pb in external electrode and other parts.). “-T1B”, “-
T2B” indicates the unit orientation (8 mm embossed
carrier tape, 3,000 pcs/reel).
1: Source
2: Gate
3: Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
50
±7.0
±0.1
±0.2
200
150
−55
to +150
V
V
A
A
mW
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17878EJ1V0DS00 (1st edition)
Date Published February 2006 NS CP(K)
Printed in Japan
1996
2SK2158A
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
P
T
- Total Power Dissipation - mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
V
7
I
D
- Drain Current - mA
200
160
120
80
40
0
160
3.
5
V
V
0
3.
120
2.5 V
80
2.0 V
40
1.5 V
V
GS
= 1.0 V
0
25
50
75
100
125
150
175
0
1
2
3
4
5
T
A
- Ambient Temperature - ˚C
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
TRANSFER CHARACTERISITICS
100
V
DS
= 3 V
I
D
- Drain Current - mA
1 000
V
DS
= 3 V
10
T
A
= 75 ˚C
25 ˚C
–25 ˚C
100
1
T
A
= –25 ˚C
25 ˚C
75 ˚C
0.1
10
0.01
0.001
0
1
V
GS
- Gate to Source Voltage - V
2
1
0.1
1
10
100
1 000
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
70
V
GS
= 1.5 V
2.5
60
50
40
30
20
10
0
1
10
100
1 000
I
D
- Drain Current - mA
T
A
= 75 ˚C
25 ˚C
–25 ˚C
R
DS(on)
- Drain to Source On-state Resistance -
Ω
70
V
GS
= 1.5 V
60
50
40
30
–25 ˚C
20
10
0
0.1
T
A
= 75 ˚C
25 ˚C
1
10
100
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-state Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Data Sheet D17878EJ1V0DS
3
2SK2158A
•
The information in this document is current as of February, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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