2N6796LCC4 datasheet, PDF - EEWORLD Datasheet

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2N6796LCC4: DescriptionPower Field-Effect Transistor, 7.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18; CategoryDiscrete semiconductor The transistor; File Size20KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N6796LCC4 Overview

Power Field-Effect Transistor, 7.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18

2N6796LCC4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CHIP CARRIER, R-CQCC-N18
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	7.4 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N18
Number of components	1
Number of terminals	18
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	30 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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2N6796LCC4

MECHANICAL DATA

Dimensions in mm (inches)

1.27 (0.050)

1.07 (0.040)

9.14 (0.360)

8.64 (0.340)

12 13 14 15 16

1.39 (0.055)

1.02 (0.040)

≈

2.16 (0.085)

N-CHANNEL

POWER MOSFET

V

DSS

= 100V

= 7.4A

11

7.62 (0.300)

7.12 (0.280)

17

18

1

2

0.76 (0.030)

0.51 (0.020)

10

9

8

I

D

7

6

5

4

3

1.65 (0.065)

1.40 (0.055)

0.33 (0.013)

Rad.

0.08 (0.003)

Ω

R

DS(ON)

= 0.18Ω

1.39 (0.055)

1.15 (0.045)

0.43 (0.017)

0.18 (0.007 Rad.

FEATURES

LCC4 CERAMIC SURFACE MOUNT PACKAGE

Underside View

Pads 6, 7, 8, 9, 10, 11, 12, 13.

Pads 4,5

Pads 1,2,15,16,17,18

Pads 3,14

Source

Gate

Drain

Not Connected

• Hermetically sealed ceramic surface

mount package

• Small footprint

• Simple drive requirements

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

DS

V

DGR

V

GS

I

D

I

DM

P

D

Drain–Source Voltage

Drain–Gate Voltage

(V

GS

= 1.0mΩ)

Gate–Source Voltage

Drain Current Continuous

Drain Current Pulsed

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

T

J

, T

STG

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

R

θJC

Thermal Resistance Junction to Case

R

θJC

Thermal Resistance Junction to Ambient

T

L

Maximum Lead Temperature 1.5mm from Case for 10 secs.

100V

±20V

7.4A

30A

22W

0.17°C/W

–55 to +150°C

5.0°CW

175°CW

300°C

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

10/99

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