Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | TO-220M, 3 PIN |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 5 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | S-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | SQUARE |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 10 MHz |
| Base Number Matches | 1 |
| 2N5337A-220M-JQR-A | 2N5337A-220M-QR-B | 2N5337A-220MR1 | 2N5337A-220M | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | conform to | incompatible |
| package instruction | TO-220M, 3 PIN | TO-220M, 3 PIN | TO-220M, 3 PIN | TO-220M, 3 PIN |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 5 A | 5 A | 5 A | 5 A |
| Collector-emitter maximum voltage | 80 V | 80 V | 80 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 40 | 40 | 40 | 40 |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 | S-MSFM-P3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | SQUARE | SQUARE | SQUARE | SQUARE |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
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