2N5337A-220M datasheet, PDF - EEWORLD Datasheet

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2N5337A-220M: DescriptionPower Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size17KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N5337A-220M Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN

2N5337A-220M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	TO-220M, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-220AB
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz
Base Number Matches	1

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2N5337A-220M

MECHANICAL DATA

Dimensions in mm

1 0.6

0.8

4.6

SILICON NPN

EPITAXIAL BASE IN

TO220 METAL PACKAGE

16.5

3.6

Dia.

1 3 .5

1 0 .6

FEATURES

• HERMETIC METAL PACKAGES

1 23

1 3 .7 0

• HIGH RELIABILITY

• MILITARY AND SPACE OPTIONS

• SCREENING TO CECC LEVELS

• FULLY ISOLATED

1.0

2 .5 4

BSC

2. 70

BSC

APPLICATIONS

• POWER LINEAR AND SWITCHING

APPLICATIONS

• GENERAL PURPOSE POWER

TO220 PACKAGE

Pin 1

– Base

Pin 2

– Collector

Pin 3

– Emitter

ABSOLUTE MAXIMUM RATINGS

case

=25°C unless otherwise stated)

CBO

CEO

EBO

tot

stg

Collector - Base voltage (I

= 0)

Collector - Emitter voltage (I

= 0)

Emitter - Base voltage (I

= 0)

Collector current

Base current

Total power dissipation at T

case

25°C

Storage Temperature

Junction Temperature

80V

10W

–65 to 200°C

200°C

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim.8/00

2N5337A-220M Related Products

	2N5337A-220M	2N5337A-220M-JQR-A	2N5337A-220M-QR-B	2N5337A-220MR1
Description	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Metal, 3 Pin, TO-220M, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to
package instruction	TO-220M, 3 PIN	TO-220M, 3 PIN	TO-220M, 3 PIN	TO-220M, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	5 A	5 A	5 A	5 A
Collector-emitter maximum voltage	80 V	80 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40	40
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	10 MHz	10 MHz	10 MHz	10 MHz
Base Number Matches	1	1	1	1

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