2N7224, JANTX2N7224, JANTXV2N7224
2N7225, JANTX2N7225, JANTXV2N7225
2N7227, JANTX2N7227, JANTXV2N7227
2N7228, JANTX2N7228, JANTXV2N7228
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/592
100V Thru 500V, Up to 34A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
FEATURES
•
•
•
•
•
•
Repetitive Avalanche Rating
Isolated and Hermetically Sealed
Low R
DS(on)
Ease of Paralleling
Ceramic Feedthroughs
Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I i
ts
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
plecrut.
us icis
PRIMARY ELECTRICAL CHARACTERISTICS @ T
C
= 25
°
C
PART NUMBER
2N7224
2N7225
2N7227
2N7228
V
DS,
Vo t
ls
100
200
400
500
R
DS(on)
.070
.100
.315
.415
I
,
A m p s
D
34
27.4
14
12
S C H E M ATIC
MECHANICAL OUTLINE
.545
.535
.144 DIA.
.050
.040
.685
.665
.800
.790
.550
.530
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1
2
3
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
.150 TYP.
4 11 R0
31 - 1
.
2N7224, JANTX2N7224, JANTXV2N7224
2N7225, JANTX2N7225, JANTXV2N7225
2N7227, JANTX2N7227, JANTXV2N7227
2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7224
34
21
136
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
150
3
4
1
5
4
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fall Time
r
Min.
100
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 2 A
3
0 ,
1
V
G S
= 1 V I
D
= 3 A
3
0 ,
4
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 8 V V
G S
= 0V
0 ,
V
D S
= 8 V V
G S
= 0 , T
J
= 125°C
0 ,
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 34A
0 ,
V
D S
= 50 V
See note 4
V
D D
= 5 V I
D
= 21A, R
G
= 2.35
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.07
0.081
40
.
25
250
100
-100
125
22
65
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
18
.
500
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 34A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 34A,d/t<100A/µs
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
5, trig
C
0
@V
D D
= 2 V S a t n T
J
= 25° , L > 2 0 µH, R
G
= 25 , Peak I
L
= 34A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7224, JANTX2N7224, JANTXV2N7224
2N7225, JANTX2N7225, JANTXV2N7225
2N7227, JANTX2N7227, JANTXV2N7227
2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7225
27.4
17
110
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
500
2.
74
1
5
4
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
200
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 1 A
3
0 ,
7
V
G S
= 1 V I
D
= 2 . A
3
0 ,
74
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 160 V, V
G S
= 0V
V
D S
= 160 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 27.4A
0 ,
V
D S
= 100 V
See note 4
V
D D
= 1 0 V I
D
= 17A, R
G
= 2.35
0 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.100
0.105
40
.
25
250
100
-100
115
22
60
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
19
.
950
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 27.4A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 27.4A,d/t<100A/µs
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0, trig
C
@V
D D
= 5 V S a t n T
J
= 25° , L > 1 mH, R
G
= 25 , Peak I
L
= 27.4A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7224, JANTX2N7224, JANTXV2N7224
2N7225, JANTX2N7225, JANTXV2N7225
2N7227, JANTX2N7227, JANTXV2N7227
2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7227
14
90
.
56
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
700
1
4
1
5
4
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
400
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 9 0 A
3
0 ,
.
V
G S
= 1 V I
D
= 1 A
3
0 ,
4
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 320 V, V
G S
= 0V
V
D S
= 320 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 14A
0 ,
V
D S
= 200 V
See note 4
V
D D
= 2 0 V I
D
= 9 A R
G
= 2.35
0 ,
,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.315
0.415
40
.
25
250
100
-100
110
18
65
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
17
.
1200
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 14A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 14A,d/t<100A/µs
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0, trig
C
.5
@V
D D
= 5 V S a t n T
J
= 25° , L > 6 2 mH, R
G
= 25 , Peak I
L
= 14A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/592
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N7224, JANTX2N7224, JANTXV2N7224
2N7225, JANTX2N7225, JANTXV2N7225
2N7227, JANTX2N7227, JANTXV2N7227
2N7228, JANTX2N7228, JANTXV2N7228
ABSOLUTE MAXIMUM RATINGS (
C
= 25°C unless otherwise noted
T
Parameter
I @ V
GS
= 10V, T
C
= 25°C
D
Continuous Drain Current
JANTXV, JANTX, 2N7228
12
80
.
48
150
12
.
± 20
2
Units
A
A
A
W
W/°C
V
mJ
A
mJ
°C
°C
I @ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
D
I
M
D
P
D
@ T
C
= 25°C
Pulsed Drain Current
1
Maximum Power Dissipation
Linear Derating Factor
V
G S
E
A S
I
R
A
E
A R
T
J
T
S T G
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
1
Repetitive Avalanche Energy
1
Operating Junction
Storage Temperature Range
Lead Temperature
750
1
2
1
5
4
4
4
-55 to 150
300(.06 from case for 10 sec)
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Drain-Source
Breakdown Voltage
R
DS(on)
S a i D a n t - o r e
ttc ri-oSuc
On-State Resistance
V
GS(th)
Gate Threshold Voltage
I
Zero Gate Voltage Drain
DSS
Current
I
S S
Gate -to-Source Leakage Forward
G
I
S S
Gate -to-Source Leakage Reverse
G
Q
G(on)
On-state Gate Charge
Q
GS
Gate-to-Source Charge
Q
Gd
Gt-oDan(Mle” Cag
aet-ri “ilr) hre
t
Turn-On Delay Time
D(on)
t
Rise Time
r
t
(off)
Turn-Off Delay Time
D
t
Fl Tm
al ie
r
Min.
500
-
-
-
-
-
-
20
.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Units
V
Test Conditions
V
G S
= 0 , I
D
=1.0 mA,
V
V
G S
= 1 V I
D
= 8 0 A
3
0 ,
.
V
G S
= 1 V I
D
= 1 A
3
0 ,
2
V
DS
= V
G S
,
D
= 250 µA
I
V
D S
= 400 V, V
G S
= 0V
V
D S
= 400 V, V
G S
= 0 , T
J
= 125°C
V
V
G S
= 20 V
V
G S
= - 0 V
2
V
G S
= 1 V I
D
= 12A
0 ,
V
D S
= 250 V
See note 4
V
D D
= 2 0 V I
D
= 8A, R
G
= 2.35
5 ,
See note 4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.415
0.515
40
.
25
250
100
-100
120
19
70
35
190
170
130
V
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
-
-
-
V
S D
t
Reverse Recovery Time
-
-
-
t
r
r
Thermal Resistance
Parameter
R
thJC
Junction-to-Case
R
thCS
Case-to-sink
R
thJA
Junction-to-Ambient
Typ.
-
-
-
-
-
-
Max.
17
.
1600
Units
V
ns
Test Conditions
T
J
= 2 ° , I
S
= 12A
3
,VG S = 0 V
5C
T
J
= 2 ° , I
F
= 12A,d/t<100A/µs
5C
id
Min.
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.21
-
-
-
Max.
0.83
-
-
-
48
Units
Test Conditions
°C/W
Mutn sraefa,
onig ufc lt
smooth, and greased
Typical socket mount
1
.
2.
3
.
4.
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue
eeiie aig us it iie y aiu ucin eprtr.
0, trig
C
.
@V
D D
= 5 V S a t n T
J
= 25° , L > 94 mH, R
G
= 25 , Peak I
L
= 12A
P l e w d h < 300 µs; Duty Cycle < 2 %
us it
See MIL-S-19500/592
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